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Iron Alloy Sputtering Target (DyFe)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Handle with clean, powder-free gloves to avoid introducing organic residues that degrade film adhesion.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can form a surface oxide layer that reduces sputtering yield and film purity.
- Mechanical Integrity: The target's fine-grained structure (≤50 µm) and ≥93% relative density require careful mounting to avoid cracking under thermal stress during high-power sputtering.
- Bonding Compatibility: Indium or elastomer bonding must be selected based on the substrate temperature and power density to prevent delamination during deposition.
This procedure covers mounting, bonding verification, and pre-sputter conditioning of the DyFe alloy target. Proper execution ensures stable deposition rates and film stoichiometry within ±2 at%.
Required Equipment: DC/RF magnetron sputtering system with Ar gas supply, Clean, lint-free gloves and isopropanol wipes
- Inspect target surface
Inspect the target surface for visible scratches, pits, or discoloration using a bright light source and reject if defects exceed Ra 0.8 µm. - Clean target surface
Wipe the target surface with isopropanol-soaked lint-free wipes in a single direction to remove particulate contamination. - Mount target onto backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method, ensuring full contact without air gaps. - Install assembly into sputtering chamber
Install the bonded assembly into the sputtering chamber and pump to base pressure below 5×10⁻⁴ Pa before introducing Ar. - Condition target via pre-sputter
Pre-sputter the target for 10–15 minutes at 5 W/cm² (DC) or 2 W/cm² (RF) under 1.0 Pa Ar to remove surface oxide and stabilize the deposition rate.
What deposition rates and thickness uniformity can be expected when DC sputtering the DyFe alloy target under optimized conditions?
Under optimized DC magnetron sputtering conditions (3–15 W/cm², 0.5–2.0 Pa Ar), the DyFe target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The actual rate and uniformity depend on the specific power density and system geometry used.
What bonding and backing plate options are available for the DyFe sputtering target and how do they affect thermal management in high-power deposition?
The target offers indium bonding or elastomer bonding, with optional backing plates of oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for high-power DC sputtering, while elastomer bonding may be sufficient for lower-power RF applications. The choice directly impacts heat dissipation and target lifetime under continuous operation.
What storage and handling considerations are critical for maintaining the integrity of the DyFe sputtering target before use?
Store the DyFe target in a dry, low-humidity environment to prevent surface oxidation. Handle with clean gloves and avoid contamination of the machined surface (Ra ≤0.8 µm). The fine-grained microstructure (≤50 µm) is sensitive to moisture and particulate exposure, which can degrade adhesion properties and film purity during deposition.
The DyFe sputtering target (1″ diameter, 0.125″ thick, 99.9% purity) offers controlled stoichiometric transfer for magnetic and magneto-optical thin films, with deposition rates of 10–80 nm/min under optimized DC/RF sputtering conditions, but requires careful bonding and backing plate selection and is limited to a single small size.
Positive
- High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar yields 10–80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Requires bonding and backing plate: Indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate are needed, adding procurement steps and system compatibility checks.
- Fixed small target size: The 1″ diameter × 0.125″ thick format limits use to systems accepting small targets and may reduce run time between changes for high-throughput processes.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
