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Copper-Iron Alloy Sputtering Target (CuFe (99:1 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum-based deposition in a magnetron sputtering system under controlled Ar atmosphere at 0.5-2.0 Pa. Deposition must be performed within the specified power density ranges to avoid target cracking or delamination from the backing plate.
- Power Density Constraint: Operate DC sputtering at 3-15 W/cm² and RF sputtering at 1-5 W/cm² to prevent thermal stress and maintain target integrity.
- Bonding and Backing Plate Compatibility: Select indium or elastomer bonding with oxygen-free copper or CuCrZr backing plate to ensure adequate thermal conductivity and mechanical support during sputtering.
- Substrate Preparation Requirement: Properly prepare substrates to achieve deposited film adhesion strength greater than 15 MPa as measured by ASTM D4541 pull-off testing.
Mount the target onto a compatible backing plate using the selected bonding method and install it into a magnetron sputtering chamber. Evacuate the chamber, introduce Ar gas to 0.5-2.0 Pa, and apply DC or RF power within the specified density range to deposit films at 10-80 nm/min.
Required Equipment: Magnetron sputtering system, Vacuum pump, Argon gas supply
- Mount Target on Backing Plate
Bond the CuFe target to an oxygen-free copper or CuCrZr backing plate using indium or elastomer bonding to ensure thermal contact. - Install Assembly in Chamber
Secure the bonded target assembly into the magnetron sputtering cathode and verify electrical and cooling connections. - Evacuate and Set Atmosphere
Evacuate the chamber to base pressure, then backfill with Ar gas to a working pressure of 0.5-2.0 Pa. - Apply Sputtering Power
Set DC power density to 3-15 W/cm² or RF power density to 1-5 W/cm² and initiate plasma. - Deposit Film
Allow deposition to proceed at 10-80 nm/min until the desired film thickness is achieved, monitoring uniformity across the substrate.
What are the maximum oxygen and nitrogen impurity limits for the CuFe 99:1 sputtering target and how do they affect film resistivity?
The CuFe (99:1 wt%) sputtering target has a total O+N impurity limit of <100 ppm, combined with total metallic impurities <500 ppm at 99.95% (3N5) purity. This low interstitial content minimizes oxygen-induced resistivity shifts in deposited films, which is critical for applications like interconnects and contact metallization where consistent electrical performance is required.
Can this 3-inch diameter CuFe target be bonded to a backing plate, and what bonding options are available for different sputtering systems?
Yes, the target supports optional bonding to a backing plate. Two bonding types are offered: indium bonding for high thermal conductivity applications and elastomer bonding for lower-cost or non-critical thermal management. The backing plate can be oxygen-free copper or CuCrZr, and bonding selection depends on the sputtering system's heat load and cooling configuration.
What is the recommended DC and RF magnetron sputtering power density range for this CuFe target to achieve stoichiometric film transfer?
The recommended sputtering power density range is 3-15 W/cm² for DC magnetron sputtering and 1-5 W/cm² for RF magnetron sputtering, under an argon atmosphere of 0.5-2.0 Pa. Within these conditions, stoichiometric transfer within ±2 at% of the CuFe 99:1 ratio is achievable, with deposition rates of 10-80 nm/min and ±5% thickness uniformity across a 100 mm substrate.
The CuFe (99:1 wt%) sputtering target with 99.95% purity and 3" diameter x 0.0625" thickness is evaluated for magnetron sputtering deposition, offering controlled stoichiometry transfer and low impurity levels, but requires careful specification matching to deposition system.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion in electronic contact metallization applications.
- Optimized sputtering conditions defined: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere yields deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, enabling repeatable thin-film fabrication.
Trade-offs
- Requires specification confirmation before ordering: Procurement must verify target purity, dimensions, composition ratio, and bonding requirements against the specific deposition system to ensure compatibility and avoid process delays.
- Stoichiometry depends on optimized parameters: Stoichiometric transfer within ±2 at% is achieved only under optimized sputtering conditions; deviations in power, pressure, or substrate preparation may alter film composition.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
