CoNiCrMo Alloy Sputtering Target 99.9% 2 in ATOMFAIR®

$230.00

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Research-grade CoNiCrMo sputtering target, 99.9% pure, 2 in dia x 0.125 in thick, for DC/RF magnetron deposition and coating runs. Order now.

Cobalt-Nickel-Chromium-Molybdenum Alloy Sputtering Target (CoNiCrMo)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Cobalt-Nickel-Chromium-Molybdenum Alloy Sputtering Target (CoNiCrMo) combines the CoNiCrMo alloy composition with a source-listed purity of 99.9% and a target size of 2 indiameter x 0.125 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • CoNiCrMo alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for diffusion barriers, gate electrodes and high-temperature protective coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-CONS
Material / Formula CoNiCrMo
Purity 99.9%
Target Size 2 indiameter x 0.125 in
Relative Density ≥97% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Powder metallurgy / Vacuum hot pressing
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires precise control of power density and argon pressure during deposition to maintain film stoichiometry and uniformity. Proper bonding to a compatible backing plate and substrate preparation are necessary to achieve specified adhesion strength and minimize contamination.

  • Sputtering Parameters: The target must be operated within DC power density of 3–15 W/cm² or RF power density of 1–5 W/cm² under an argon atmosphere of 0.5–2.0 Pa to achieve deposition rates of 10–80 nm/min with ±5% thickness uniformity.
  • Bonding and Backing Plate Compatibility: The target requires bonding to an oxygen-free copper or CuCrZr backing plate using indium or elastomer bonding to ensure thermal and electrical contact during sputtering.
  • Adhesion Strength Requirement: Deposited films must exhibit adhesion strength greater than 15 MPa per ASTM D4541, which requires properly prepared substrates prior to deposition.
  • Purity and Impurity Limits: The target material has total metallic impurities below 1000 ppm and oxygen plus nitrogen below 200 ppm to minimize contamination of deposited films.
  • Physical Integrity Constraints: The target must maintain a relative density of at least 97% and a grain size no larger than 50 µm to ensure consistent sputtering behavior and film quality.

What are the optimal sputtering power density and pressure ranges for this CoNiCrMo alloy target to achieve stoichiometric film transfer?

For stoichiometric CoNiCrMo film deposition, operate DC magnetron sputtering at 3–15 W/cm² or RF sputtering at 1–5 W/cm² under 0.5–2.0 Pa Ar atmosphere. Under these conditions, the source specifies composition control within ±2 at% and deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate.

What bonding and backing plate options are available for this CoNiCrMo sputtering target, and how do they affect compatibility with different magnetron sputtering systems?

The target offers optional indium bonding or elastomer bonding, and backing plates in oxygen-free copper or CuCrZr alloy. These options allow integration with systems requiring specific thermal or mechanical interfaces; confirm compatibility with your system's bonding requirements and cooling constraints before ordering.

What are the purity and impurity specifications of this CoNiCrMo target and what handling precautions are recommended to prevent contamination?

The target is 99.9% (3N) pure with total metallic impurities <1000 ppm and O+N <200 ppm. The surface finish is machined to Ra ≤ 0.8 µm with fine-grained microstructure (≤50 µm). Handle in a clean, dry environment using gloves and avoid exposure to dust or moisture to maintain film quality and adhesion.

The CoNiCrMo alloy sputtering target (SKU AF-MT-S-CONI-9999-CFJH) with 99.9% purity and 2-inch diameter x 0.125-inch thickness is evaluated for DC/RF magnetron sputtering, offering stoichiometric film transfer within ±2 at% and adhesion strength >15 MPa, but requires careful bonding selection and power density management to avoid thermal stress.

Positive

  • High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion for diffusion barriers and gate electrodes.
  • Fine-grained dense microstructure: Relative density ≥97% of theoretical and grain size ≤50 µm ensure uniform sputtering erosion and consistent film thickness uniformity of ±5% across a 100 mm substrate.

Trade-offs

  • Bonding and backing plate dependency: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional but must be specified; incorrect selection can cause thermal mismatch or poor heat dissipation during high-power sputtering.
  • Narrow power density window: Optimal DC sputtering at 3-15 W/cm² and RF at 1-5 W/cm² requires precise power control; exceeding limits may induce target cracking or film stoichiometry drift beyond ±2 at%.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).