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Cobalt-Gadolinium Alloy Sputtering Target (CoGd)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This sputtering target requires vacuum deposition equipment and specific power density ranges for optimal film stoichiometry. Bonding type and backing plate material must be selected to match the deposition system's thermal and mechanical requirements.
- Power Density Constraint: Operate at 3-15 W/cm² DC or 1-5 W/cm² RF under 0.5-2.0 Pa Ar atmosphere to achieve stoichiometric transfer within ±2 at%.
- Bonding Compatibility: Select indium bonding for high thermal conductivity or elastomer bonding for lower thermal budgets to ensure proper target mounting.
- Backing Plate Requirement: Use oxygen-free copper or CuCrZr backing plate to match the target's thermal expansion and mounting interface.
- Surface Finish Tolerance: Maintain machined surface finish Ra ≤ 0.8 µm to ensure uniform electrical contact and thermal transfer.
- Purity and Density Constraint: Maintain ≥99.95% purity and ≥93% relative density to minimize contamination and ensure target integrity during sputtering.
How does the 99.95% purity and low impurity levels of the CoGd sputtering target influence thin film performance in magnetron sputtering?
The 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination in deposited films, improving resistivity control and adhesion strength, which exceeds 15 MPa (ASTM D4541) on properly prepared substrates.
What bonding and backing plate options are available for the CoGd target and how do they affect thermal management during high-power density sputtering?
The target offers optional indium bonding or elastomer bonding and backing plates in oxygen-free copper or CuCrZr. These choices directly impact thermal conductivity and heat dissipation, critical for sustaining DC power densities up to 15 W/cm² and RF up to 5 W/cm² without target cracking or delamination.
Why are a fine grain size (≤50 µm) and high relative density (≥93%) specified for this CoGd sputtering target?
A fine grain size ensures uniform erosion during sputtering, reducing the risk of nodule formation and arcing, while the ≥93% relative density minimizes porosity and outgassing, leading to consistent film stoichiometry (within ±2 at% composition) and thickness uniformity (±5% across 100 mm substrate).
This CoGd alloy sputtering target offers 99.95% purity and fine grain size for consistent thin film deposition in magnetron sputtering applications, with optimized parameters for magnetic and magneto-optical films.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination and improves deposited film resistivity and adhesion.
- Optimized sputtering performance: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
Trade-offs
- Narrow operating window: Optimal performance requires precise power density and Ar pressure ranges; deviation may reduce deposition rate or film uniformity.
- Substrate preparation critical: Adhesion strength >15 MPa is only guaranteed on properly prepared substrates; inadequate surface treatment can lead to poor film adhesion.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
