CoFeAl Alloy Sputtering Target 2 in 99.95% ATOMFAIR®

$240.00

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Research-grade CoFeAl (50:25:25 at%) sputtering target, 99.95% pure, 2 in dia x 0.06 in, for DC/RF magnetron deposition and coating R&D. Order now.

Cobalt-Iron-Aluminum Alloy Sputtering Target (CoFeAl (50:25:25 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Cobalt-Iron-Aluminum Alloy Sputtering Target (CoFeAl (50:25:25 at%)) combines the CoFeAl (50:25:25 at%) alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.06 inand other sizes.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • CoFeAl alloy with 50:25:25 at% composition ratio, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for magnetic recording media, wear-resistant and biomedical coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-COFS
Material / Formula CoFeAl (50:25:25 at%)
Purity 99.95%
Target Size 2 indiameter x 0.06 inand other sizes
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires specific DC/RF magnetron sputtering conditions under controlled argon atmosphere to achieve stoichiometric transfer and film uniformity. Bonding type, backing plate material, and substrate preparation must be matched to meet adhesion and purity specifications.

  • Sputtering Power and Atmosphere: Operating at 3-15 W/cm² DC or 1-5 W/cm² RF under 0.5-2.0 Pa Ar atmosphere is required to achieve deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates.
  • Bonding and Backing Plate Options: Indium or elastomer bonding to oxygen-free copper or CuCrZr backing plates must be selected based on system compatibility and thermal management requirements.
  • Adhesion Strength Requirement: Deposited films must achieve adhesion strength greater than 15 MPa as measured by ASTM D4541 pull-off testing on properly prepared substrates.
  • Surface Finish and Thickness Tolerance: The target is supplied with machined surface finish Ra ≤ 0.8 µm and thickness tolerance ±0.1 mm to ensure consistent sputtering performance.
  • Composition and Purity Constraints: The CoFeAl alloy composition is controlled to 50:25:25 at% with ±2 at% deviation under optimized conditions, with total metallic impurities below 500 ppm and O+N below 100 ppm.

What deposition rate and thickness uniformity can be achieved with the CoFeAl (50:25:25 at%) sputtering target under DC and RF magnetron sputtering?

Under DC magnetron sputtering at 3–15 W/cm² and 0.5–2.0 Pa Ar, deposition rates of 10–80 nm/min (±5% thickness uniformity across a 100 mm substrate) are specified. For RF sputtering at 1–5 W/cm², the same rate and uniformity ranges apply. These values assume optimized parameters and a properly prepared substrate system.

What bonding and backing plate options are available for this CoFeAl target, and how do they affect compatibility with different sputtering systems?

The target can be supplied with indium bonding or elastomer bonding (optional). Backing plate options include oxygen-free copper or CuCrZr (optional). These options must be matched to the thermal and mechanical requirements of the specific deposition system. The product description advises confirming bonding type and backing plate material against your system before ordering.

What is the manufacturing method and how does it affect the target's density and grain size?

The target is manufactured by vacuum induction melting/casting, achieving a relative density ≥95% of theoretical and a fine-grained microstructure with grain size ≤50 µm. These parameters minimize porosity and ensure consistent sputtering behavior and film quality.

The CoFeAl (50:25:25 at%) sputtering target offers 99.95% purity and fine grain size, enabling high-quality thin film deposition with controlled stoichiometric transfer and adhesion strength >15 MPa under optimized DC/RF magnetron sputtering conditions.

Positive

  • High purity and low impurity levels: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
  • Optimized sputtering performance: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates under DC or RF magnetron sputtering at recommended parameters.

Trade-offs

  • Requires controlled sputtering conditions: Stoichiometric transfer within ±2 at% and uniform deposition require operation within specific power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa) ranges.
  • Bonding and backing plate options need matching: The target is supplied with optional indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate; compatibility with the deposition system must be confirmed before ordering.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).