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Cobalt-Chromium-Tin Alloy Sputtering Target (CoCrSn (50/25/25 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This document defines handling and deposition constraints for the CoCrSn (50/25/25 at%) sputtering target. It applies only after the target composition, size, and bonding configuration are verified against the deposition system.
- Procurement verification: Confirm target purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering or installation.
- Substrate and system compatibility: Verify that the selected substrate system and coating quantity are compatible with the specified CoCrSn target composition and dimensions.
- Sputtering operating range: Operate the target only within the stated DC/RF magnetron sputtering power density and argon pressure ranges to maintain controlled deposition.
- Bonding and backing plate selection: Select indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate to match the deposition system's mounting configuration.
This procedure covers pre-installation verification, installation, and operating checks for the CoCrSn target in a magnetron sputtering process. Use the target only after confirming its dimensions, composition, bonding, and deposition parameters.
Required Equipment: DC/RF magnetron sputtering system
- Verify specifications
Verify the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before installation. - Install target
Install the target in the magnetron sputtering system using the selected backing plate and bonding configuration. - Set deposition parameters
Set the DC/RF magnetron sputtering power density and argon pressure to the recommended operating ranges for this target. - Monitor deposition
Start the coating process and monitor deposition rate and thickness uniformity for the duration of the run.
What sputtering power density range is recommended for the CoCrSn (50/25/25 at%) target to maintain stoichiometric transfer in deposited films?
The target is optimized for DC magnetron sputtering at 3–15 W/cm² or RF at 1–5 W/cm² under 0.5–2.0 Pa Ar. Within these ranges, composition transfer to the film is controlled to within ±2 at% of nominal. Exceeding these power densities may lead to preferential sputtering or thermal damage.
What bonding options are available for the CoCrSn sputtering target and how do they affect thermal management?
The target can be supplied with indium bonding or elastomer bonding on an optional oxygen-free copper or CuCrZr backing plate. Indium bonding provides higher thermal conductivity for high-power DC sputtering, while elastomer bonding offers a lower-cost alternative suitable for RF sputtering at moderate power densities. Both options are explicitly stated in the product specifications.
How does the relative density (≥95%) and grain size (≤50 µm) of the CoCrSn target influence sputtering performance?
The ≥95% relative density ensures minimal voids and reduced particle generation during sputtering, while the fine grain size (≤50 µm) promotes uniform erosion and consistent film composition. These specifications contribute to the stated thickness uniformity of ±5% across a 100 mm substrate.
This CoCrSn (50/25/25 at%) sputtering target offers 99.9% purity and fine-grained microstructure for uniform thin-film deposition, but requires careful matching of bonding, backing plate, and process parameters to the specific sputtering system.
Positive
- High-purity alloy with controlled impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Stoichiometric transfer within ±2 at%: Nominal CoCrSn (50/25/25 at%) composition transfers to films with ±2 at% accuracy under optimized sputtering conditions, enabling precise alloy film formation.
Trade-offs
- Requires system-specific bonding and backing plate: Bonding type (indium/elastomer) and backing plate (oxygen-free copper/CuCrZr) must be selected and confirmed compatible with the deposition system to avoid thermal and mechanical issues.
- Narrow process parameter window for optimal performance: Deposition requires strict control of power density (3-15 W/cm² DC or 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa) to achieve specified deposition rates and film uniformity.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
