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Cobalt Alloy Sputtering Target (CoSm (50:50))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target is supplied for vacuum coating workflows using magnetron sputtering and related deposition methods. CoSm (50:50) is a magnetic alloy that may require DC or RF sputtering with a maximum power density of 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere.
- Atmosphere and Power Constraints: Operate sputtering only under 0.5-2.0 Pa argon atmosphere with DC power density 3-15 W/cm² or RF power density 1-5 W/cm² to avoid target fracture or overheating.
- Deposition Uniformity and Adhesion Constraint: The target delivers deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate and achieves adhesion strength >15 MPa on properly prepared surfaces.
- Pre-Installation Verification: Verify target composition, dimensions, bonding type (indium or elastomer), and backing plate material (oxygen-free copper or CuCrZr) are compatible with the deposition system before installation.
Install the sputtering target into a DC or RF magnetron sputtering system operating under 0.5-2.0 Pa argon atmosphere. Condition the target surface prior to deposition to remove any oxide layer or surface contaminants from storage or machining.
Required Equipment: DC/RF magnetron sputtering system, Argon gas supply, Vacuum pump system
- Inspect the target
Inspect the target for visible damage, cracks, or surface contamination before loading into the sputtering chamber. - Mount the target
Mount the target onto the magnetron cathode using the specified backing plate (oxygen-free copper or CuCrZr) and bond type (indium or elastomer). - Evacuate the chamber
Evacuate the sputtering chamber to a base pressure below 1 x 10⁻⁶ Torr to minimize residual gas contamination. - Admit argon gas
Admit high-purity argon into the chamber to establish a working pressure between 0.5 and 2.0 Pa. - Pre-sputter the target
Pre-sputter the target for 5-10 minutes at low power to remove the native oxide layer and stabilize the plasma. - Set deposition parameters
Set DC power density to 3-15 W/cm² or RF power density to 1-5 W/cm² to achieve a deposition rate of 10-80 nm/min. - Deposit the film
Deposit the film onto the prepared substrate while monitoring thickness uniformity and adjusting substrate rotation if needed for ±5% uniformity across 100 mm.
What deposition rate and thickness uniformity can be achieved when sputtering the CoSm (50:50) target under recommended DC magnetron conditions?
Under optimized DC magnetron sputtering at 3–15 W/cm² in a 0.5–2.0 Pa Ar atmosphere, the CoSm (50:50) target yields deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. These values apply when operating within the specified power density range and are achievable on properly prepared substrates.
What backing plate and bonding options are available for the CoSm (50:50) sputtering target, and how do they affect integration into a deposition system?
The target supports indium bonding or elastomer bonding as optional bonding methods, with backing plate choices of oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for high-power DC sputtering up to 15 W/cm², while elastomer bonding may be selected for lower thermal load or cost-sensitive applications. The selection must be confirmed against the deposition system's clamping and cooling design before ordering.
What purity and impurity limits define the CoSm (50:50) sputtering target, and why are they critical for thin film performance?
The target is specified at 99.95% (3N5) purity with total metallic impurities below 500 ppm and O+N below 100 ppm. These tight impurity controls minimize film contamination, which is essential for maintaining consistent magnetic, magneto-optical, and hydrogen-storage properties in deposited layers, and directly supports the stated adhesion strength >15 MPa (ASTM D4541) on prepared substrates.
The CoSm (50:50) sputtering target from Atomfair delivers 99.95% purity and fine-grained microstructure for stoichiometric thin film deposition. Its performance is optimized under specific DC/RF sputtering parameters, but system compatibility and precise control of power density, pressure, and bonding are required to achieve the stated adhesion and uniformity.
Positive
- High Purity and Low Contamination: 99.95% (3N5) purity with total metallic impurities below 500 ppm and O+N below 100 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
- Optimized Sputtering Performance: Achieves 10–80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates under 3–15 W/cm² DC or 1–5 W/cm² RF at 0.5–2.0 Pa Ar, enabling reproducible thin film fabrication.
Trade-offs
- Sputtering Parameter Sensitivity: Stated performance (deposition rate, uniformity, stoichiometry) depends on tight control of power density, Ar pressure, and substrate temperature; deviations may reduce film quality.
- System Compatibility Requirements: Bonding type (indium/elastomer) and backing plate material (OFC/CuCrZr) must match the sputtering system's thermal and mechanical constraints; incorrect selection may cause poor heat dissipation or target failure.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
