Aluminum-Zirconium Sputtering Target 99.95% ATOMFAIR®

$335.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

99.95% (3N5) AlZr sputtering target, 2 in diameter × 0.25 in, fine-grained ≤50 μm with Ra ≤0.8 μm finish for DC/RF deposition. Order now.

Aluminum-Zirconium Alloy Sputtering Target (AlZr)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Zirconium Alloy Sputtering Target (AlZr) combines the AlZr alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.25 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlZr alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALZS
Material / Formula AlZr
Purity 99.95%
Target Size 2 indiameter x 0.25 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

The AlZr sputtering target requires DC/RF magnetron sputtering within specified power density and argon pressure ranges to achieve optimal deposition rates and film uniformity. The target must be bonded to a compatible backing plate and used with a clean vacuum system to prevent contamination and ensure adhesion strength exceeding 15 MPa.

  • Composition and Purity Confirmation: Confirm the target composition and purity grade against the deposition system requirements to ensure stoichiometric transfer within ±2 at% and avoid contamination from metallic or gaseous impurities.
  • Deposition Parameters: Use the target with DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa argon atmosphere to achieve deposition rates of 10-80 n/min with ±5% thickness uniformity across a 100 m substrate.
  • Bonding and Backing Plate Selection: Select the appropriate bonding type (indium or elastomer) and backing plate material (xygen-free copper or CuCrR) to ensure proper thermal management and mechanical stability during sputtering.
  • Surface Finisch and Thickness Tolerances: Verfy the target surface finisch (Ra ≤0.8 µ) and thickness tolerance (±0.1 m) before installation to maintain consistent sputtering performance and film quality.
  • Substrate Preparation for Adesion: Prepare the substrate surface appropriately to achieve deposited film adhesion strength greater than 15 Mpa as per ASTM D4541 pull-off testing.

How does the 99.95% purity and total metallic impurity limit of <500 ppm affect the electrical resistivity of AlZr films deposited by DC magnetron sputtering?

The 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, which improves deposited film resistivity. This is critical for applications such as interconnect metallization and diffusion barriers, where low and consistent resistivity is required. The source states that the purity and impurity levels are designed to reduce contamination and improve resistivity and adhesion in deposited films.

What backing plate material and bonding type are recommended for this AlZr target when used in RF magnetron sputtering at 5 W/cm²?

For RF sputtering at up to 5 W/cm², the target can be ordered with a backing plate of oxygen-free copper or CuCrZr and with either indium or elastomer bonding. Indium bonding on an oxygen-free copper backing plate is recommended for maximum thermal conductivity, which is essential to prevent target cracking or delamination under the thermal load of high-power RF deposition.

Why is the specified surface finish of Ra ≤ 0.8 µm important for the performance of this AlZr sputtering target?

The machined surface finish with Ra ≤ 0.8 µm reduces the risk of arcing during plasma ignition and ensures uniform sputter erosion across the target surface. This specification supports the stated thickness uniformity of ±5% across a 100 mm substrate and contributes to reproducible film properties in both DC and RF magnetron sputtering processes.

AlZr sputtering target with 99.95% purity, fine grain size ≤50 µm, and relative density ≥95% provides controlled stoichiometric transfer for DC/RF magnetron sputtering, suitable for interconnect and barrier layer applications with adhesion >15 MPa.

Positive

  • High purity with low contamination: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes film contamination, improving resistivity and adhesion.
  • Optimized sputtering performance: Specified DC/RF power density ranges (3-15 W/cm² DC, 1-5 W/cm² RF) and deposition rates 10-80 nm/min with ±5% thickness uniformity enable reliable thin film fabrication for interconnect and optical reflector coatings.

Trade-offs

  • Bonding method selection required: Indium or elastomer bonding is optional; the choice affects thermal transfer efficiency and compatibility with specific sputtering systems, requiring careful selection based on operating conditions.
  • Specification verification necessary: Buyer must confirm target dimensions, purity, composition ratio, and bonding requirements against their deposition system before ordering to avoid mismatch or process failure.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).