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Aluminum-Silicon Alloy Sputtering Target (AlSi(80:20at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the maximum allowable oxygen and nitrogen impurity level in the AlSi(80:20at%) sputtering target, and how does it affect film resistivity?
The target specifies O+N <100 ppm, which minimizes oxide and nitride formation during deposition. This low impurity level is critical for maintaining consistent film resistivity in interconnect metallization and diffusion barrier applications, as excess oxygen or nitrogen can increase resistivity and degrade adhesion.
Can this 3-inch diameter AlSi target be bonded to a backing plate for use in a specific magnetron sputtering system, and what bonding options are available?
Yes, the target supports optional indium bonding or elastomer bonding to an oxygen-free copper or CuCrZr backing plate. This allows integration with standard DC/RF magnetron sputtering systems operating at 0.5-2.0 Pa Ar atmosphere, but you must confirm the bonding type and backing plate dimensions with your system's cathode requirements before ordering.
What is the recommended storage and handling procedure to prevent oxidation or contamination of the AlSi(80:20at%) sputtering target before installation?
The target should be stored in a dry, inert atmosphere (e.g., argon or nitrogen) at room temperature to minimize surface oxidation. Handle with clean, powder-free gloves and avoid direct contact with the sputtering surface to maintain the machined surface finish of Ra ≤ 0.8 µm and prevent contamination that could degrade film adhesion.
Technical evaluation of the AlSi(80:20at%) sputtering target with 99.95% (3N5) purity and 3 in diameter x 0.25 in thickness, optimized for DC/RF magnetron sputtering under 0.5-2.0 Pa Ar atmosphere, delivering 10-80 nm/min deposition rates with ±5% thickness uniformity on 100 mm substrates and >15 MPa film adhesion.
Positive
- High purity with low impurities: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, supporting reliable resistivity and adhesion in deposited films.
- Optimized deposition parameters: Suitable for DC (3-15 W/cm²) or RF (1-5 W/cm²) magnetron sputtering, achieving 10-80 nm/min deposition rates and ±5% thickness uniformity on 100 mm substrates, with >15 MPa adhesion strength per ASTM D4541.
Trade-offs
- Requires system compatibility check: The target specifications (purity, dimensions, composition ratio, bonding) must be confirmed against the user's deposition system before ordering, as noted in the procurement check.
- Optional bonding and backing plate: Bonding type (indium or elastomer) and backing plate (oxygen-free copper or CuCrZr) are optional, requiring explicit specification and potentially separate procurement for proper mounting.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
