Aluminum-Chromium Alloy Sputtering Target 99.95% ATOMFAIR®

$335.00

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AlCr sputtering target, 99.95% pure, 2 in x 0.25 in, ≤50 μm grain, ±0.1 mm tolerance, for DC/RF magnetron coating. Research grade. Order now.

Aluminum-Chromium Alloy Sputtering Target (AlCr)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Chromium Alloy Sputtering Target (AlCr) combines the AlCr alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.25 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlCr alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALCS
Material / Formula AlCr
Purity 99.95%
Target Size 2 indiameter x 0.25 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This document outlines critical constraints for the Aluminum-Chromium alloy sputtering target during use in magnetron sputtering systems. Adherence to these specifications ensures film stoichiometry, adhesion, and target longevity.

  • Power Density and Atmosphere: Operate DC magnetron sputtering at 3-15 W/cm² or RF at 1-5 W/cm² under an Ar atmosphere of 0.5-2.0 Pa to avoid target cracking and maintain deposition rate of 10-80 nm/min.
  • Bonding and Backing Plate: The target must be bonded to a backing plate of oxygen-free copper or CuCrZr using indium or elastomer bonding to ensure thermal management during sputtering.
  • Substrate Preparation: Achieve adhesion strength >15 MPa only on properly prepared substrates; verify substrate cleanliness and surface activation before deposition.
  • Target Handling: Maintain the machined surface finish of Ra ≤0.8 µm and avoid contamination to prevent particle generation during sputtering.
  • Deposition Uniformity: Thickness uniformity of ±5% across a 100 mm substrate requires precise target-to-substrate distance and plasma confinement.

What deposition rates and uniformity can be expected from the AlCr sputtering target under typical DC/RF magnetron conditions?

Under optimized conditions (DC: 3-15 W/cm², RF: 1-5 W/cm², 0.5-2.0 Pa Ar), the AlCr target achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The stoichiometric transfer of AlCr is maintained within ±2 at% of the nominal composition under these parameters.

What bonding and backing plate options are available for the AlCr target, and how do they affect thermal management during sputtering?

The target supports indium bonding or elastomer bonding as optional bonding types, with backing plate options of oxygen-free copper or CuCrZr alloy. Indium bonding offers superior thermal conductivity for high-power DC sputtering, while elastomer bonding provides easier debonding and lower thermal stress. The choice directly impacts heat dissipation and target cooling efficiency, which is critical for maintaining stable deposition rates and preventing target cracking at power densities up to 15 W/cm² (DC).

What is the significance of the ≤50 µm grain size and ≥95% relative density for AlCr target performance?

The fine grain size (≤50 µm) and high relative density (≥95% of theoretical) minimize preferential sputtering and arc formation, promoting uniform erosion and consistent film composition over the target lifetime. These specifications also reduce gas entrapment and particulate generation, which is essential for producing low-defect, high-adhesion AlCr films in interconnect, barrier, and optical coating applications.

Atomfair's AlCr sputtering target (99.95% purity, ≤50 µm grain size) delivers consistent film stoichiometry within ±2 at% for interconnect and barrier layer applications, but requires careful matching of DC/RF power and Ar pressure to maintain ±5% thickness uniformity.

Positive

  • High Purity and Low Impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination in deposited films and improving resistivity and adhesion.
  • Optimized Sputtering Performance: Fine grain size ≤50 µm and relative density ≥95% of theoretical enable stable sputtering rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates under specified DC/RF conditions.

Trade-offs

  • Fixed Target Dimensions: Supplied as 2 inch diameter x 0.25 inch thickness only; buyers must confirm compatibility with their deposition system's target holder and sputter gun geometry.
  • Process Parameter Sensitivity: Optimal deposition rates of 10-80 nm/min are achieved only within a narrow window of 3-15 W/cm² (DC) or 1-5 W/cm² (RF) at 0.5-2.0 Pa Ar; deviations may degrade film uniformity or stoichiometry.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).