AlSnCu Sputtering Target 99.9% 3 in × 0.25 in ATOMFAIR®

$560.00

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AlSnCu alloy sputtering target, 99.9% purity, 3 in diameter × 0.25 in, ≥95% density and Ra ≤0.8 μm finish for DC/RF deposition. Order now.

Aluminum-Tin-Copper Alloy Sputtering Target (AlSnCu)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Tin-Copper Alloy Sputtering Target (AlSnCu) combines the AlSnCu alloy composition with a source-listed purity of 99.9% and a target size of 3 indiameter x 0.25 inand other sizes.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlSnCu alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALSS
Material / Formula AlSnCu
Purity 99.9%
Target Size 3 indiameter x 0.25 inand other sizes
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires precise control of power density and chamber pressure to prevent cracking and ensure stoichiometric transfer. Bonding method and substrate preparation must be verified against the deposition system to achieve adhesion strength above 15 MPa.

  • Power Density Limits: Operate the target at DC power densities between 3 and 15 W/cm² or RF power densities between 1 and 5 W/cm² to avoid target cracking or excessive heating.
  • Atmosphere Pressure: Maintain argon pressure between 0.5 and 2.0 Pa during sputtering to ensure stable plasma and stoichiometric film transfer.
  • Bonding Compatibility: Use indium or elastomer bonding to attach the target to the backing plate, ensuring thermal and electrical contact within the specified thickness tolerance.
  • Substrate Preparation: Prepare substrates to achieve adhesion strength greater than 15 MPa per ASTM D4541 pull-off test.
  • Purity Constraints: Confirm total metallic impurities below 1000 ppm and oxygen plus nitrogen below 200 ppm to minimize film contamination.

What is the achievable film thickness uniformity and composition tolerance when sputtering the AlSnCu (99.9%) target under optimized DC magnetron conditions?

Under optimized DC magnetron sputtering (3–15 W/cm², 0.5–2.0 Pa Ar), the AlSnCu target yields deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The nominal AlSnCu composition transfers to the deposited film within ±2 at% stoichiometry.

Which bonding and backing plate options are available for the AlSnCu target to ensure thermal compatibility with high-power RF sputtering systems?

The AlSnCu target supports indium bonding or elastomer bonding as optional bonding types, and backing plates made of oxygen-free copper or CuCrZr. These options provide thermal management for RF sputtering up to 5 W/cm² and DC sputtering up to 15 W/cm².

How does the 99.9% purity and low oxygen/nitrogen content of the AlSnCu target affect the electrical resistivity and adhesion of deposited films?

The 99.9% purity with total metallic impurities <1000 ppm and combined O+N <200 ppm minimizes contamination, improving deposited film resistivity. Deposited films also achieve adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.

The AlSnCu alloy sputtering target (99.9% purity, 3 in diameter x 0.25 in thickness) is evaluated for DC/RF magnetron sputtering, offering stoichiometric film transfer within ±2 at% and deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, constrained by indium or elastomer bonding options and a maximum power density of 3-15 W/cm² (DC) or 1-5 W/cm² (RF).

Positive

  • High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion for interconnect and barrier layer applications.
  • Controlled film uniformity and adhesion: Achieves ±5% thickness uniformity across 100 mm substrates and deposited film adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates, supporting reliable coating performance.

Trade-offs

  • Bonding and backing plate constraints: Indium or elastomer bonding is optional, and backing plate material (oxygen-free copper or CuCrZr) must be specified; improper selection may affect thermal management and target mounting compatibility in the sputtering system.
  • Operating parameter sensitivity: Optimal deposition requires strict control of power density (3-15 W/cm² DC or 1-5 W/cm² RF) and Ar atmosphere (0.5-2.0 Pa); deviations risk off-stoichiometry or reduced film quality, demanding precise process tuning.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).