AlSn Alloy Sputtering Target 99.99% 5 in × 15 mm ATOMFAIR®

$1,325.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade AlSn alloy sputtering target, 99.99% purity, 5 in x 15 mm, for DC/RF magnetron sputtering and vacuum coating workflows. Order now.

Aluminum-Tin Alloy Sputtering Target (AlSn)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Tin Alloy Sputtering Target (AlSn) combines the AlSn alloy composition with a source-listed purity of 99.99% and a target size of 5 indiameter x 15 mm.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlSn alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALSS
Material / Formula AlSn
Purity 99.99%
Target Size 5 indiameter x 15 mm
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

The AlSn sputtering target requires operation within specified DC/RF power density and argon pressure ranges to maintain deposition rate and film uniformity. Proper bonding to a compatible backing plate and substrate surface preparation are necessary to achieve the stated adhesion strength and prevent target damage.

  • Power Density Range: Power density must be maintained within 3-15 W/cm² for DC and 1-5 W/cm² for RF sputtering to avoid target overheating or erratic deposition.
  • Argon Pressure Setting: Argon pressure must be set between 0.5 and 2.0 Pa to achieve the target deposition rate of 10-80 nm/min with ±5% thickness uniformity.
  • Bonding Compatibility: Indium or elastomer bonding must be selected according to the backing plate material (oxygen-free copper or CuCrZr) to ensure adequate thermal and electrical contact.
  • Substrate Surface Preparation: Substrate surface preparation must be performed to achieve a pull-off adhesion strength greater than 15 MPa as per ASTM D4541.

What are the recommended sputtering parameters for achieving optimal film uniformity with the Atomfair AlSn sputtering target?

The target is optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. These conditions support stoichiometric transfer with ≤±2 at% composition deviation.

What bonding and backing plate options are available for the AlSn sputtering target and how do they affect thermal management during deposition?

The target offers optional indium bonding or elastomer bonding, and backing plate options of oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for high-power DC sputtering, while elastomer bonding is suitable for lower temperature RF processes. The choice affects thermal dissipation and target cooling efficiency.

What are the purity and impurity limits of the Atomfair AlSn sputtering target and how do they influence deposited film properties?

The AlSn target is supplied with 99.99% (4N) purity, total metallic impurities <100 ppm, and O+N <20 ppm. This high purity minimizes contamination, improving deposited film resistivity and adhesion, with adhesion strength >15 MPa per ASTM D4541 on properly prepared substrates.

The AlSn alloy sputtering target at 99.99% purity with ≤50 µm grain size is optimized for DC/RF magnetron sputtering, delivering 10-80 nm/min deposition rates with ±5% thickness uniformity over 100 mm substrates, suitable for interconnect metallization, diffusion barrier layers, and optical reflector coatings. Bonding and backing plate options require pre-purchase system compatibility verification.

Positive

  • High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination, improving deposited film resistivity and adhesion strength (>15 MPa per ASTM D4541).
  • Controlled deposition uniformity: Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across a 100 mm substrate.

Trade-offs

  • Requires pre-purchase compatibility check: The target dimensions, bonding type (indium or elastomer), and backing plate (oxygen-free copper or CuCrZr) must be verified against the user's deposition system before ordering to ensure proper fit and operation.
  • Narrow deposition parameter window: Optimal film quality and stoichiometry (±2 at%) are achieved only within the specified power density and argon pressure ranges; deviations may degrade uniformity, adhesion, or composition control.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).