AlSiCu Sputtering Target 99.95% 2 in × 0.25 in ATOMFAIR®

$335.00

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AlSiCu sputtering target, 99.95% purity, 2 in x 0.25 in, AF-AL-ALSS, for DC/RF magnetron deposition on 100 mm wafers and coating runs. Order now.

Aluminum-Silicon-Copper Alloy Sputtering Target (AlSiCu)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Silicon-Copper Alloy Sputtering Target (AlSiCu) combines the AlSiCu alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.25 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlSiCu alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALSS
Material / Formula AlSiCu
Purity 99.95%
Target Size 2 indiameter x 0.25 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This target requires controlled vacuum deposition under specific atmosphere and power conditions to achieve intended film properties. Proper selection of bonding type and backing plate is essential for thermal management and mechanical stability.

  • Deposition Atmosphere and Power: Sputtering must be performed under 0.5–2.0 Pa Ar atmosphere with DC power density of 3–15 W/cm² or RF power density of 1–5 W/cm² to maintain stoichiometric transfer and deposition rate.
  • Bonding and Backing Plate Compatibility: Select either indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate to ensure adequate thermal conduction and mechanical support during sputtering.
  • Substrate Preparation Requirement: Deposited films achieve adhesion strength exceeding 15 MPa only on properly prepared substrates, as specified by ASTM D4541 pull-off testing.
  • Target Material Integrity: The fine grain size (≤50 µm) and relative density ≥95% are required to minimize arcing and ensure uniform erosion across the target surface.

What is the maximum power density and deposition rate for the AlSiCu sputtering target under DC vs RF magnetron sputtering?

The AlSiCu target supports DC magnetron sputtering at 3-15 W/cm² and RF at 1-5 W/cm², both under 0.5-2.0 Pa Ar atmosphere. Deposition rates range from 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate, enabling controlled film growth for interconnect or barrier layer applications.

Does the AlSiCu target require a specific bonding type or backing plate for integration into existing sputtering systems?

The target offers optional indium bonding or elastomer bonding, with an oxygen-free copper or CuCrZr backing plate. These options allow compatibility with different sputtering system cooling and mounting requirements, but the specific bonding and backing plate must be confirmed against the deposition system before ordering.

What are the purity and impurity limits of the AlSiCu sputtering target, and how do they affect film quality?

The target has 99.95% (3N5) purity with total metallic impurities below 500 ppm and O+N below 100 ppm. This high purity minimizes contamination in deposited films, improving resistivity control and adhesion strength, which exceeds 15 MPa per ASTM D4541 on properly prepared substrates.

The AlSiCu sputtering target with 99.95% purity and fine-grained microstructure enables high-quality thin film deposition for interconnect and optical coating applications, but requires careful verification of system compatibility and precise control of sputtering parameters.

Positive

  • High-purity AlSiCu alloy: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes film contamination, improving deposited film resistivity and adhesion for interconnect and barrier layers.
  • Fine-grained uniform microstructure: Grain size ≤50 µm and relative density ≥95% of theoretical ensure consistent sputtering behavior and uniform film thickness (±5% across 100 mm substrate) under optimized conditions.

Trade-offs

  • System compatibility verification: The target dimensions, bonding type (indium or elastomer), and backing plate material must be confirmed against the specific sputtering system to ensure proper fit, thermal management, and electrical contact.
  • Process parameter sensitivity: Optimal film stoichiometry and adhesion require tight control of Ar pressure (0.5–2.0 Pa) and power density (3–15 W/cm² DC or 1–5 W/cm² RF), which may necessitate process optimization to achieve specified deposition rates and uniformity.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).