AlSb Sputtering Target 99.95% 2 in × 0.25 in ATOMFAIR®

$335.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade AlSb sputtering target, 99.95% pure, 2 in diameter × 0.25 in, ≥95% density, Ra ≤0.8 μm for DC/RF deposition. Order now.

Aluminum-Antimony Alloy Sputtering Target (AlSb)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Antimony Alloy Sputtering Target (AlSb) combines the AlSb alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.25 inand other sizes.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlSb alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALSS
Material / Formula AlSb
Purity 99.95%
Target Size 2 indiameter x 0.25 inand other sizes
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This target requires DC/RF magnetron sputtering within specified power and pressure ranges to achieve stoichiometric film transfer and adhesion. Bonding type and backing plate must be selected to match the deposition system's thermal and mechanical interface.

  • Sputtering Processing Parameters: Operate at 3-15 W/cm² DC or 1-5 W/cm² RF under 0.5-2.0 Pa Ar atmosphere to achieve 10-80 nm/min deposition rate.
  • Substrate Preparation Requirement: Prepare substrate surfaces to achieve adhesion strength greater than 15 MPa per ASTM D4541 pull-off test.
  • Target Bonding Compatibility: Select indium or elastomer bonding and copper/CuCrZr backing plate according to deposition system thermal and mechanical requirements.
  • Grain Structure Constraint: Maintain grain size ≤50 µm and relative density ≥95% to ensure uniform sputter erosion and film thickness uniformity.
  • Procurement Verification: Confirm target purity, dimensions, composition ratio, and bonding requirements against deposition system before ordering.

What power density range is recommended for sputtering the AlSb target to maintain stoichiometric film transfer?

For DC magnetron sputtering, the recommended power density is 3–15 W/cm²; for RF sputtering, 1–5 W/cm², both under an Ar atmosphere of 0.5–2.0 Pa. Within this range, deposition rates of 10–80 nm/min are achievable with ±5% thickness uniformity across a 100 mm substrate, enabling stoichiometric transfer within ±2 at% under optimized conditions.

Can the AlSb sputtering target be ordered with different bonding types and backing plates?

Yes, the target is available with indium bonding or elastomer bonding as optional bonding types, and the backing plate can be oxygen-free copper or CuCrZr. These options must be confirmed with the supplier before ordering to ensure compatibility with the deposition system's cooling and mounting requirements.

How do the grain size and relative density of the AlSb target influence sputtered film quality?

The target has a fine-grained microstructure with grain size ≤50 µm and a relative density ≥95% of theoretical. These parameters reduce nodule formation and arcing during sputtering, promoting more uniform erosion and consistent film stoichiometry, which is critical for applications like interconnect metallization and diffusion barriers where adhesion strength >15 MPa (ASTM D4541) is specified.

The AlSb sputtering target offers high purity (99.95%) with low metallic and gaseous impurities, and optimized sputtering parameters for controlled deposition rates and uniformity. However, it requires careful selection of bonding and backing plate to match the deposition system, and precise control of power density and argon pressure for optimal film quality.

Positive

  • High purity with low impurity levels: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
  • Controlled deposition rate and uniformity: Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.

Trade-offs

  • Requires bonding and backing plate selection: The target must be ordered with appropriate bonding (indium or elastomer) and backing plate (oxygen-free copper or CuCrZr) to match the deposition system's mounting and thermal management requirements.
  • Sputtering performance depends on precise parameter control: Optimal deposition results require strict adherence to the specified power density, argon pressure, and substrate preparation; deviations may reduce film uniformity, stoichiometry, or adhesion.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).