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Molybdenum-Copper-Silicon Alloy Sputtering Target (MoCuSi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target must be stored in a dry, inert atmosphere to prevent surface oxidation and contamination. Bonding integrity degrades above 150°C for indium-bonded targets, requiring controlled thermal management during sputtering.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can form surface oxides that reduce film adhesion and increase arcing during deposition.
- Bonding Constraint: Indium-bonded targets must not exceed 150°C during operation to prevent bond failure and target delamination.
- Power Density Limit: Exceeding 15 W/cm² (DC) or 5 W/cm² (RF) can cause thermal cracking or localized melting of the alloy surface.
- Substrate Preparation Requirement: Deposited film adhesion strength >15 MPa requires substrates to be cleaned and plasma-etched prior to coating.
This procedure covers mounting, bonding verification, and pre-sputter conditioning of a MoCuSi alloy target in a magnetron sputtering system. Proper installation minimizes particle generation and ensures stoichiometric film transfer.
Required Equipment: DC/RF magnetron sputtering system with substrate holder, Inert gas supply (Ar, 99.999% purity), Thermal interface material (indium foil or elastomer pad)
- Inspect target surface and bonding layer
Inspect the target surface for cracks, chips, or discoloration and verify the bonding layer is uniform without voids or delamination. - Mount target onto backing plate
Mount the target onto the backing plate using the specified bonding method, ensuring full thermal contact and torque fasteners to manufacturer specifications. - Install assembly into sputtering chamber
Install the target assembly into the magnetron cathode, connect cooling lines, and verify water flow rate meets minimum requirement for heat dissipation. - Evacuate chamber and introduce process gas
Evacuate the chamber to base pressure below 5×10⁻⁴ Pa, then backfill with Ar to a working pressure of 0.5–2.0 Pa. - Condition target by pre-sputtering
Pre-sputter the target for 10–15 minutes at 50% of maximum power density with shutter closed to remove surface oxides and stabilize the plasma. - Set deposition parameters and begin coating
Set power density to 3–15 W/cm² (DC) or 1–5 W/cm² (RF), open the shutter, and deposit film at a rate of 10–80 nm/min while monitoring thickness uniformity.
What deposition parameters are recommended for the MoCuSi target to maintain stoichiometric transfer within ±2 at%?
For stoichiometric transfer, operate under DC magnetron sputtering at 3–15 W/cm² or RF at 1–5 W/cm², with an Ar atmosphere of 0.5–2.0 Pa. Under these conditions, the target achieves deposition rates of 10–80 nm/min and ±5% thickness uniformity across a 100 mm substrate, as specified for the AF-MT-MOCS model.
Which bonding and backing plate configurations are available for the MoCuSi target, and how do they affect heat dissipation during sputtering?
The target offers indium bonding or elastomer bonding options, with backing plates in oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for high-power DC sputtering, while elastomer bonding simplifies mounting and reduces thermal stresses. The choice influences heat transfer to the backing plate, directly affecting target cooling and stable deposition rates.
What are the specified impurity limits and grain size of the MoCuSi target, and how do they impact film quality?
The target is 99.95% pure with total metallic impurities below 500 ppm and O+N below 100 ppm, minimizing contamination in deposited films. Its fine-grained structure (≤50 µm) promotes uniform sputter erosion and consistent film stoichiometry. These specifications support low-resistivity, high-adhesion coatings essential for diffusion barriers and gate electrodes.
The MoCuSi sputtering target (99.95% purity, 3" diameter x 0.25" thick) provides high-purity alloy deposition with low impurity levels and fine-grained microstructure, enabling stoichiometric transfer and adhesion >15 MPa under optimized DC/RF magnetron sputtering; however, users must confirm bonding and backing plate compatibility with their deposition system and operate within the specified power density and pressure ranges.
Positive
- High purity with controlled impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving film resistivity and adhesion.
- Optimized sputtering deposition performance: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates under DC/RF magnetron sputtering, suitable for diffusion barriers and gate electrodes.
Trade-offs
- System compatibility required for bonding and backing plate: The target offers optional indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates; users must confirm these specifications against their deposition system to avoid fit or thermal issues.
- Fixed sputtering process parameters: Optimal deposition rates (10-80 nm/min) and uniformity (±5%) are achieved only within the specified DC/RF power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa) ranges; deviations may affect film quality.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
