Aluminum Nitride Ceramic Substrate, 10 mm x 10 mm x 0.5 mm, Pack of 10Product Type: Technical ceramic substrate
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||
|
LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
|
How does the thermal conductivity of this aluminum nitride ceramic substrate compare to alumina, and why is that significant for power electronics?
This aluminum nitride substrate offers thermal conductivity above 170 W/(m·K) at 25 °C, which is approximately 7–10 times higher than alumina ceramic. This high thermal conductivity enables efficient heat dissipation in power modules and electronic components, reducing operating temperatures and improving reliability.
Is the thermal expansion coefficient of this AlN substrate matched to silicon for direct mounting of power devices?
Yes, the thermal expansion of this aluminum nitride ceramic substrate is specified as close to that of silicon. This match minimizes thermal-mechanical stress during temperature cycling, making it suitable for direct attachment of silicon power devices and electronic components in module assemblies.
What mechanical and electrical properties should be considered when handling and integrating this 0.5 mm thick AlN substrate?
The substrate has a flexural strength >400 MPa, fracture toughness of 3.0 MPa·√m, and a Vickers hardness of 11 GPa, indicating robust mechanical integrity despite its 0.5 mm thickness. Electrically, it provides a DC breakdown voltage ≥15 kV/mm, ensuring reliable insulation. The surface roughness Ra of 0.2–0.3 µm is suitable for thin-film metallization and direct bonding processes.
This 10 mm x 10 mm x 0.5 mm aluminum nitride ceramic substrate provides thermal conductivity above 170 W/(m·K), approximately 7–10 times that of alumina, with a thermal expansion coefficient close to silicon, making it suitable for power module and electronic component heat-dissipation applications.
Positive
- High thermal conductivity for heat dissipation: Thermal conductivity >170 W/(m·K) at 25°C, roughly 7–10 times that of alumina, enabling efficient heat transfer in power electronics and high-temperature assemblies.
- CTE match to silicon enables reliable bonding: Thermal expansion coefficient close to silicon reduces thermomechanical stress during power cycling, supporting long-term reliability in insulated substrate applications.
Trade-offs
- Surface roughness requires post-processing for some uses: As-fired surface roughness Ra of 0.2–0.3 μm may necessitate polishing or lapping for applications requiring finer surface finish or direct metallization without additional planarization.
- Thin 0.5 mm substrate imposes handling fragility: At 0.5 mm thickness, the substrate is mechanically fragile and requires careful handling during manual assembly or machining to avoid chipping or fracture, especially under flexural loads.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
