|
N type Monocrystalline Silicon Wafer – 2 inch (50.8 mm) <100> Double-Side Polished
Product Type: Silicon wafer
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||
|
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
What is the typical thickness tolerance and flatness specification for the 2-inch N-type <100> double-side polished silicon wafer?
The wafer has a typical thickness of 400 ± 25 µm with a total thickness variation (TTV) of less than 5 µm, bow of less than 10 µm, and warp of less than 10 µm. These tight geometric tolerances ensure consistent performance in photolithography and thin-film deposition processes.
Which resistivity ranges are available for this N-type double-side polished silicon wafer, and how do they affect device applications?
Selectable resistivity values include 0.001–0.005 ohm·cm, 1–10 ohm·cm, >10 ohm·cm, >5K ohm·cm, and >10K ohm·cm. Low-resistivity wafers (e.g., 0.001–0.005 ohm·cm) are suited for power devices and ohmic contacts, while high-resistivity options (>5K ohm·cm) are preferred for RF and high-frequency applications to minimize substrate losses.
What surface roughness and polish specifications are guaranteed for the front and back sides of this double-side polished wafer?
Both the front and back sides have a surface roughness of Ra < 0.5 nm, achieved through double-side polishing (DSP). This ultra-smooth finish minimizes scattering and defect nucleation, making the wafer suitable for epitaxial growth, MEMS fabrication, and optical waveguide applications.
This 2-inch N-type <100> double-side polished silicon wafer offers 6N purity, sub-0.5 nm surface roughness, and tight TTV/BOW/WARP tolerances, making it suitable for R&D applications requiring precise geometry and clean surfaces. The selectable resistivity range allows customization for different doping requirements.
Positive
- Ultra-smooth double-side polished surface: Front-side and back-side roughness Ra <0.5 nm enables low-defect interfaces for thin-film deposition, photonic structures, or direct bonding applications.
- Tight geometric tolerances across wafer: TTV <5 um, BOW <10 um, and WARP <10 um ensure consistent thickness and flatness, critical for lithographic alignment, wafer bonding, and process uniformity.
Trade-offs
- Thickness tolerance ±25 um: The 400 ±25 um typical thickness may require batch sorting for applications sensitive to absolute thickness, such as resonator frequency tuning or etch-depth control.
- Resistivity selection requires application matching: Multiple resistivity ranges (0.001–0.005 to >10K ohm·cm) are offered, but improper selection for target doping level can alter device electrical properties—consultation with technical sales is advised.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
