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N type / P type / high resistivity option Monocrystalline Silicon Wafer – 8 inch (200 mm) <100> / <110> / <111> Single-Side Polished
Product Type: Silicon wafer
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the typical thickness tolerance and wafer geometry specification for the 8-inch N-type/P-type/high-resistivity monocrystalline silicon wafer?
The wafer has a typical thickness of 725 ± 25 µm with a TTV of <10 µm, BOW of <20 µm, and WARP of <25 µm. Front-side roughness is Ra <0.5 nm, and the back side is etched. These parameters are specified for the 200 mm diameter single-side polished wafer.
Which resistivity ranges are available for the N-type, P-type, and high-resistivity options on this 8-inch silicon wafer?
Selectable resistivity values include 0.001–0.005 ohm·cm, 1–10 ohm·cm, >10 ohm·cm, >5K ohm·cm, and >10K ohm·cm. The wafer is supplied in N-type, P-type, or high-resistivity doping configurations, with orientation options of <100>, <110>, or <111>.
What material purity and crystal growth methods are used for this 8-inch single-side polished silicon wafer?
The wafer is fabricated from 6N (99.9999%) monocrystalline silicon using either Czochralski (CZ) or Float Zone (FZ) methods. The material purity and growth method are specified as available options for this configuration, ensuring high-quality substrates for research and device fabrication.
This 8-inch monocrystalline silicon wafer offers 6N purity with tight geometric tolerances (TTV <10 um, BOW <20 um) and front-side roughness <0.5 nm, suitable for research-grade semiconductor processing. Its single-side polished finish and thickness tolerance of +/-25 um are key considerations for application fit.
Positive
- High Purity and Growth Options: 6N monocrystalline silicon available in CZ or FZ growth provides low defect density essential for research-grade semiconductor and materials science applications.
- Precise Geometrical Specifications: TTV <10 um, BOW <20 um, WARP <25 um, and front-side roughness Ra <0.5 nm ensure uniform substrate conditions for photolithography, thin-film deposition, and metrology.
Trade-offs
- Single-Side Polished Finish: Only one side is polished; the etched back side may not be suitable for applications requiring double-side polished surfaces, such as certain MEMS or optical devices.
- Thickness Tolerance: A typical thickness of 725 +/-25 um may impose a constraint on processes demanding tighter thickness uniformity across the wafer, potentially affecting yield or alignment.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
