Thermal Oxidation Silicon Wafer 4 inch 285 nm ATOMFAIR®

Environmental contamination and mechanical damage must be minimized to preserve oxide layer integrity. Moisture and particulate exposure can compromise surface quality and oxide uniformity.

• Contamination Control: Store wafers in cleanroom-compatible containers at controlled temperature and humidity to prevent particulate adhesion and moisture-induced oxide degradation.
• Mechanical Handling: Handle wafers only with clean, non-marring tweezers or vacuum wands to avoid scratches or chipping on the polished single-side surface.
• Oxide Layer Sensitivity: Avoid excessive thermal shock or rapid temperature changes, as differential expansion can induce stress cracks in the 285 nm oxide layer.

Use this sequence to safely unpack, inspect, and store a 4-inch double-side oxidized wafer prior to processing. Proper initial handling prevents contamination and mechanical damage to the oxide layer and polished surface.

Required Equipment: Cleanroom gloves (nitrile or latex), PTFE-coated wafer tweezers

1. Inspect packaging integrity
   Inspect the outer packaging for breaches or moisture indicators before transferring the wafer to a cleanroom environment.
2. Don cleanroom gloves
   Don cleanroom gloves and use PTFE-coated wafer tweezers to extract the wafer from its cassette or container.
3. Visually examine the wafer
   Visually examine the wafer under a bright light for chips, cracks, or visible contamination on both the polished and oxide surfaces.
4. Place the wafer into a clean storage box
   Place the wafer into a cleanroom-grade storage box with the polished side facing upward and secure the lid.
5. Record storage conditions
   Record the storage temperature and humidity levels if the wafer will remain outside a vacuum enclosure for more than 24 hours.

4-inch thermal oxidation silicon wafer with double-sided 285 nm oxide layer on single-side polished monocrystalline silicon substrate, offering a customizable oxide thickness range of 20-2000 nm for research and device fabrication.

Positive

• Double-sided oxide layer: Provides uniform thermal oxide on both wafer surfaces, enabling symmetric dielectric isolation for devices such as MEMS or capacitive sensors.
• Customizable oxide thickness range: Oxide thickness can be specified from 20 to 2000 nm, allowing precise tuning of electrical and optical properties for specific process requirements.

Trade-offs

• Single-side polished finish: Only one side is polished; the unpolished backside may introduce surface roughness that complicates processes requiring double-side smoothness or adhesion.
• Base thickness tolerance ±25 µm: The 500 µm nominal thickness with ±25 µm tolerance demands careful process integration for applications sensitive to wafer thickness uniformity.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).