SiO2 Silicon Nitride Wafer 12 Inch 5nm-10μm ATOMFAIR®

$421.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade 12 inch single-side oxidation silicon nitride wafer with 5 nm-10 μm SiO2 film, // options and PECVD route. Order now.

SKU: AF-SI-W-SINX-12IN-S047
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12 Inch Single-Side Oxidation Silicon Nitride Wafer

Product Type: Silicon nitride wafer
Research-grade laboratory product

Product Overview

12 inch single-side oxidation silicon nitride wafer is listed with selectable crystal orientation, conductivity type and SiO2 film thickness from 5 nm to 10 μm.

The conventional SiO2 film thickness is listed as 100-500 nm. Oxidation furnace and PECVD processing routes are available for specification confirmation.

Performance Features

  • Crystal orientations <100>, <111> and <110> listed
  • SiO2 film thickness from 5 nm to 10 μm listed
  • Conventional SiO2 thickness of 100-500 nm listed
  • Oxidation furnace and PECVD processing routes listed

Technical Specifications

Parameter Specification / Available Values
Atomfair Model AF-SINX-12IN-S
Size 12 inch
Crystal Orientation <100>, <111> or <110>
SiO2 Film Thickness 5 nm-10 μm; conventional thickness 100-500 nm
Surface Single-Side Oxidation
Processing Methods Oxidation furnace or PECVD
Type N-type, P-type or undoped high-resistivity
Resistivity Heavily doped: < 0.001 ohm.cm; lightly doped: 1-100 ohm.cm; undoped: > 100-20000 ohm.cm

Quotation Confirmation

12 inch size, single-side oxidation, crystal orientation, SiO2 film thickness, conductivity type and target resistivity band should be confirmed before quotation. The requested processing route should also be stated.

MODEL AND SPECIFICATION CONFIRMATION: Confirm the selected size, material system and configuration before quotation.
COMPATIBILITY CONFIRMATION: Confirm the substrate, surface treatment and intended integration requirements for the selected item.
QUANTITY CONFIRMATION: Include the required specification and quantity when requesting quotation support.
LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Supplier: Atomfair
Brand: ATOMFAIR®

What is the maximum SiO2 film thickness available for the 12-inch single-side oxidation silicon nitride wafer?

The SiO2 film thickness ranges from 5 nm to 10 μm, with a conventional thickness of 100-500 nm. Both oxidation furnace and PECVD processing routes are available for specification confirmation.

Which crystal orientations and conductivity types are supported for this 12-inch silicon nitride wafer?

Crystal orientations <100>, <111>, and <110> are listed. Conductivity types include N-type, P-type, or undoped high-resistivity, with resistivity bands from heavily doped (< 0.001 ohm.cm) to undoped (> 100-20000 ohm.cm).

What processing methods are available for the SiO2 film on this wafer?

Both oxidation furnace and PECVD processing routes are listed for the SiO2 film. The requested processing route must be stated during quotation confirmation to ensure compatibility with the intended application.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).