2 Inch Double-Side Oxidation Silicon Nitride WaferProduct Type: Silicon nitride wafer
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Supplier: Atomfair
Brand: ATOMFAIR®
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SiO2 film thickness and crystal orientation must be confirmed before processing. Oxidation furnace or PECVD route must be stated to ensure compatibility with the intended substrate and integration requirements.
- Film Thickness Confirmation: SiO2 film thickness must be specified within the 5 nm to 10 μm range, with conventional thickness between 100-500 nm, to match the target application.
- Processing Route Selection: The processing route, either oxidation furnace or PECVD, must be stated to align with the wafer's intended integration and substrate requirements.
- Substrate Compatibility: Confirm the substrate, surface treatment, and integration requirements to ensure the wafer meets the intended device specifications.
Confirm the wafer size, crystal orientation, SiO2 film thickness, conductivity type, and target resistivity band before quotation. State the preferred processing route to ensure compatibility with the intended application.
Required Equipment: Technical specification sheet, Substrate compatibility reference
- Confirm wafer size and orientation
Select the 2 inch wafer size and specify the crystal orientation as <100>, <111>, or <110> based on the intended device requirements. - Specify SiO2 film thickness
Define the SiO2 film thickness within the 5 nm to 10 μm range, noting the conventional thickness of 100-500 nm for standard applications. - Select conductivity type and resistivity
Choose the conductivity type as N-type, P-type, or undoped high-resistivity, and specify the target resistivity band from the available ranges. - State the processing route
Indicate whether the oxidation furnace or PECVD processing route is required to ensure compatibility with the substrate and integration plan. - Submit quotation request
Include the confirmed size, material system, configuration, and quantity when requesting a quotation from the technical sales team.
What is the range of SiO2 film thickness available for the 2-inch double-side oxidation silicon nitride wafer, and what is the conventional thickness range?
The SiO2 film thickness can be specified from 5 nm to 10 μm, with a conventional thickness range of 100–500 nm typically used for standard applications. This allows flexibility for both ultra-thin and thick oxide requirements.
Which crystal orientations and conductivity types are available for this wafer to ensure compatibility with different device designs?
The wafer is available in <100>, <111>, or <110> crystal orientations, and can be doped as N-type, P-type, or undoped high-resistivity. This allows integration with a variety of semiconductor processes.
What specifications must be confirmed before ordering this double-side oxidation silicon nitride wafer?
Before quotation, the crystal orientation, SiO2 film thickness, conductivity type, target resistivity band, and processing route (oxidation furnace or PECVD) must be confirmed. This ensures the wafer meets the intended application requirements.
The 2-inch double-side oxidation silicon nitride wafer (AF-SI-W-SINX-02IN-S048) offers a wide range of SiO2 film thicknesses (5 nm to 10 μm) and crystal orientations, enabling application-specific tuning for dielectric isolation or stress management in thin-film devices. However, the requirement for confirmation of processing route (oxidation furnace vs. PECVD) and target resistivity band introduces lead-time dependencies and demands careful specification matching before procurement.
Positive
- Broad SiO2 thickness flexibility: SiO2 film thickness spans 5 nm to 10 μm, with a conventional range of 100-500 nm, allowing precise dielectric layer tuning for capacitance, barrier, or stress-control applications in semiconductor or MEMS device stacks.
- Multiple crystal orientations offered: Crystal orientations <100>, <111>, and <110> are available, enabling substrate matching for anisotropic etching, epitaxial growth, or device layout-specific requirements common in research fab.
Trade-offs
- Processing route confirmation required: Both oxidation furnace and PECVD routes are listed as available, but the specific processing method must be confirmed with each order, potentially affecting film density, step coverage, and interface trap density.
- Resistivity band must be specified upfront: Conductivity type and target resistivity (e.g., heavily doped < 0.001 ohm.cm or undoped > 100-20000 ohm.cm) require explicit selection, adding lead time and risk of mismatch if electrical requirements are incompletely defined.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
