4 Inch Multilayer Continuous Film CVD MoS2 Thin Film on SiO2/Si SubstrateProduct Type: Multilayer Continuous Film
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
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Supplier: Atomfair
Brand: ATOMFAIR®
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The multilayer continuous film CVD MoS2 product is constrained to transfer-compatible substrates and requires confirmation of integration details before use. No additional handling, storage, or processing constraints are stated in the source data.
- Transfer-compatible substrate restriction: The continuous MoS2 film is transfer-compatible with PET, PI, ITO, FTO, glass, and metal substrates, while the substrate, surface treatment, and intended integration requirements must be confirmed before quotation.
What is the band gap of the multilayer MoS2 film and how does it differ from monolayer MoS2?
The multilayer MoS2 film has an indirect band gap of approximately 1.23 eV, while monolayer MoS2 has a direct band gap of approximately 1.85 eV. This difference is explicitly stated in the product specifications, where the bulk (multilayer) band gap is listed as indirect and the monolayer band gap as direct.
What alternative substrates are compatible with transferring the CVD MoS2 film?
The CVD MoS2 multilayer film is transfer-compatible to substrates including PET, PI, ITO, FTO, glass, and metal. The product description states that these substrates can be obtained through transfer, though the film is initially supplied on a SiO2/Si substrate with a 300 nm oxide layer.
What is the typical grain size of the MoS2 crystals in the multilayer continuous film?
The typical grain size is several tens to approximately one hundred micrometers per side for triangular single-crystal grains, as specified in the technical specifications table. This grain size is characteristic of the CVD-grown multilayer continuous film configuration.
This 4-inch multilayer continuous film CVD MoS2 on SiO2/Si with 300 nm oxide layer provides an undoped n-type semiconductor with a bulk indirect band gap of ~1.23 eV, suitable for optoelectronic and microelectronic device research, but requires careful handling due to environmental sensitivity and transfer-process dependencies.
Positive
- CVD-grown undoped MoS2 layer: Produced via chemical vapor deposition, the undoped MoS2 multilayer continuous film exhibits a bulk indirect band gap of approximately 1.23 eV, providing a stable n-type semiconductor platform for fundamental device studies.
- Transfer-compatible substrate flexibility: The film can be transferred to PET, PI, ITO, FTO, glass, or metal substrates after growth, enabling integration into diverse device architectures without requiring direct growth on target substrates.
Trade-offs
- Substrate transfer process dependency: Reliance on post-growth transfer to alternative substrates introduces potential for film contamination, mechanical damage, or delamination, requiring careful handling and validated transfer protocols.
- Environmental sensitivity of MoS2: As a layered transition metal dichalcogenide, MoS2 is susceptible to ambient degradation from moisture and oxygen, necessitating inert storage or encapsulation for long-term stability and reproducible measurements.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).


