Silicon Nitride Wafer 6 Inch SiO2 5nm-10μm ATOMFAIR®

$209.00

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6 inch double-side oxidation silicon nitride wafer with SiO2 film from 5 nm-10 μm, 100-500 nm conventional range, and N/P/undoped types.

SKU: AF-SI-W-SINX-06IN-S052
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6 Inch Double-Side Oxidation Silicon Nitride Wafer

Product Type: Silicon nitride wafer
Research-grade laboratory product

Product Overview

6 inch double-side oxidation silicon nitride wafer is listed with selectable crystal orientation, conductivity type and SiO2 film thickness from 5 nm to 10 μm.

The conventional SiO2 film thickness is listed as 100-500 nm. Oxidation furnace and PECVD processing routes are available for specification confirmation.

Performance Features

  • Crystal orientations <100>, <111> and <110> listed
  • SiO2 film thickness from 5 nm to 10 μm listed
  • Conventional SiO2 thickness of 100-500 nm listed
  • Oxidation furnace and PECVD processing routes listed

Technical Specifications

Parameter Specification / Available Values
Atomfair Model AF-SINX-6IN-D
Size 6 inch
Crystal Orientation <100>, <111> or <110>
SiO2 Film Thickness 5 nm-10 μm; conventional thickness 100-500 nm
Surface Double-Side Oxidation
Processing Methods Oxidation furnace or PECVD
Type N-type, P-type or undoped high-resistivity
Resistivity Heavily doped: < 0.001 ohm.cm; lightly doped: 1-100 ohm.cm; undoped: > 100-20000 ohm.cm

Quotation Confirmation

6 inch size, double-side oxidation, crystal orientation, SiO2 film thickness, conductivity type and target resistivity band should be confirmed before quotation. The requested processing route should also be stated.

MODEL AND SPECIFICATION CONFIRMATION: Confirm the selected size, material system and configuration before quotation.
COMPATIBILITY CONFIRMATION: Confirm the substrate, surface treatment and intended integration requirements for the selected item.
QUANTITY CONFIRMATION: Include the required specification and quantity when requesting quotation support.
LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Supplier: Atomfair
Brand: ATOMFAIR®

This document defines the configurational and processing constraints that must be satisfied before a 6-inch double-side oxidized silicon nitride wafer is quoted. Crystal orientation, SiO2 film thickness, conductivity type, target resistivity band, and processing route must be confirmed at the time of inquiry.

  • Orientation and doping selection: Confirm the crystal orientation, conductivity type, and target resistivity band for the wafer before quotation.
  • Oxide thickness and route declaration: Confirm the SiO2 film thickness and state whether oxidation furnace or PECVD processing is requested.
  • Model and configuration check: Confirm the selected size, material system, and configuration before quotation.
  • Integration compatibility verification: Confirm the substrate, surface treatment, and intended integration requirements for the selected item.
  • Quantity specification: Include the required specification and quantity when requesting quotation support.

What is the maximum SiO2 film thickness available for the 6-inch double-side oxidation silicon nitride wafer?

The SiO2 film thickness can be specified from 5 nm up to 10 μm, with a conventional thickness range of 100–500 nm. Both oxidation furnace and PECVD processing routes are available for specification confirmation.

Which crystal orientations and conductivity types are supported for this silicon nitride wafer?

The wafer supports crystal orientations <100>, <111>, and <110>, and is available in N-type, P-type, or undoped high-resistivity configurations. Resistivity ranges from heavily doped (< 0.001 ohm.cm) to lightly doped (1–100 ohm.cm) and undoped (> 100–20000 ohm.cm).

What processing methods are available for the SiO2 film deposition on this wafer?

The SiO2 film can be deposited via oxidation furnace or PECVD processing routes. The specific processing method must be stated during quotation confirmation to ensure compatibility with the intended application.

The AF-SINX-6IN-D double-side oxidation silicon nitride wafer on a 6-inch substrate offers a broad SiO2 film thickness range from 5 nm to 10 μm, with conventional 100-500 nm, and supports crystal orientations <100>, <111>, and <110>, enabling flexible integration in semiconductor device fabrication.

Positive

  • Broad SiO2 film thickness range: The SiO2 film thickness is selectable from 5 nm to 10 μm, including a conventional range of 100-500 nm, accommodating diverse dielectric and insulation requirements for research or pilot-scale device stacks.
  • Multiple crystal orientations available: Crystal orientations <100>, <111>, and <110> are listed, providing process flexibility for epitaxial growth, doping profiles, or stress engineering in semiconductor fabrication.

Trade-offs

  • Requires specification confirmation before order: Crystal orientation, SiO2 film thickness, conductivity type, resistivity band, and processing route (oxidation furnace or PECVD) must be confirmed prior to quotation, introducing lead time for custom specification alignment.
  • Processing route impacts film properties: The choice between oxidation furnace and PECVD processing routes affects film stoichiometry, density, and stress; buyers must specify the intended route to match application requirements, as both are not automatically equivalent.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).