2 Inch Single-Side Oxidation Silicon Nitride WaferProduct Type: Silicon nitride wafer
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Supplier: Atomfair
Brand: ATOMFAIR®
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What SiO2 film thickness options are available on the 2 inch single-side oxidation silicon nitride wafer?
The listed SiO2 film thickness range is 5 nm to 10 μm, with a conventional thickness band of 100-500 nm. The requested thickness should be confirmed before quotation, and either oxidation furnace or PECVD processing routes can be used for specification confirmation.
Can I order this wafer with <111> or <110> orientation and with n-type or p-type doping?
Crystal orientations <100>, <111>, and <110> are listed. Conductivity types are N-type, P-type, or undoped high-resistivity, with resistivity bands of < 0.001 ohm.cm for heavily doped material, 1-100 ohm.cm for lightly doped material, and > 100-20000 ohm.cm for undoped material. All of these parameters must be confirmed before quotation.
Does the oxidation furnace or PECVD processing route need to be specified when ordering this wafer?
Yes; the requested processing route should be stated as part of the quotation confirmation because oxidation furnace and PECVD processing routes are both listed. Compatibility details such as substrate, surface treatment, and intended integration requirements should also be confirmed for the selected item.
The 2-inch single-side oxidation silicon nitride wafer offers broad flexibility through selectable crystal orientation (<100>, <111>, <110>), conductivity type (N-type, P-type, undoped high-resistivity), and SiO2 film thickness ranging from 5 nm to 10 μm, accommodating diverse substrate integration requirements for thin-film deposition or device prototyping. However, the uncommitted specification set — requiring customer confirmation of crystal orientation, SiO2 thickness, resistivity band, and processing route (oxidation furnace vs. PECVD) — places the onus on the buyer to supply precise technical parameters for quotation, introducing lead time for specification finalization.
Positive
- Wide spec flexibility: Supports three crystal orientations, N- or P-type doping, undoped high-resistivity (>100-20000 ohm.cm), and SiO2 film thickness from 5 nm to 10 μm, enabling matching to a range of epitaxial or thin-film process requirements.
- Multiple processing routes: Provides both oxidation furnace and PECVD processing options, allowing users to select the method best suited to their thermal budget or film-quality constraints.
Trade-offs
- Spec-dependent procurement: Crystal orientation, SiO2 thickness, conductivity type, resistivity band, and processing route must all be confirmed before quotation, requiring the buyer to supply detailed specifications and extending procurement lead time.
- No pre-set configuration: The wafer is offered as a customizable blank rather than a pre-characterized standard item, necessitating the user to specify and validate all relevant parameters before ordering.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
