12 Inch Double-Side Oxidation Silicon Nitride WaferProduct Type: Silicon nitride wafer
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, substrate matching or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Supplier: Atomfair
Brand: ATOMFAIR®
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Configuration parameters must be confirmed before quotation for this 12-inch double-side oxidation silicon nitride wafer. The selected configuration must be compatible with the substrate, surface treatment, and intended integration requirements.
- Configuration confirmation: Wafer size, double-side oxidation surface, crystal orientation, SiO2 film thickness, conductivity type, and target resistivity band must be confirmed before quotation.
- Processing route confirmation: The intended processing route, oxidation furnace or PECVD, must be stated during specification confirmation.
- Compatibility confirmation: Substrate, surface treatment, and intended integration requirements must be confirmed for the selected item.
Follow these steps to specify a 12-inch double-side oxidation silicon nitride wafer before requesting a quotation. Each configuration parameter must be confirmed so the wafer matches the intended processing route.
- Confirm wafer size and surface
Confirm the required 12-inch size and double-side oxidation surface configuration. - Select crystal orientation
Select the crystal orientation from <100>, <111>, or <110>. - Specify SiO2 film thickness
Specify the SiO2 film thickness within the available 5 nm to 10 μm range. - Define conductivity type and resistivity band
Define the conductivity type and target resistivity band from the listed options. - State processing route
State whether oxidation furnace or PECVD processing route is intended. - Include specification and quantity
Include the required specification and quantity when requesting quotation support.
What resistivity ranges are available for the 12-inch double-side oxidation silicon nitride wafer, and how do the heavily doped, lightly doped, and undoped types differ?
The wafer is available with heavily doped (<0.001 ohm.cm), lightly doped (1-100 ohm.cm), and undoped high-resistivity (>100-20000 ohm.cm) options as listed in the technical specifications. The heavily doped type provides extremely low resistivity suitable for conductive substrates, while undoped high-resistivity is ideal for applications requiring minimal substrate losses. The choice of conductivity type and target resistivity band should be confirmed before quotation.
Which crystal orientations are available for this double-side oxidation silicon nitride wafer, and how should the orientation be selected?
The wafer is offered in <100>, <111>, and <110> crystal orientations as listed. The selection should be based on the intended device integration requirements, substrate matching, and surface treatment needs. The orientation must be confirmed before quotation to ensure compatibility with the target application.
What processing methods are used for SiO2 deposition on this double-side oxidation wafer, and what should be considered when choosing between them?
The SiO2 film can be deposited via oxidation furnace or PECVD, as specified in the product details. The requested processing route should be stated during quotation confirmation to align with the required film properties and thermal budget. Both methods are available, but the final choice depends on the specific application requirements.
This 12-inch double-side oxidation silicon nitride wafer provides researchers with systematic control over critical variables: crystal orientation (<100>, <111>, <110>), SiO2 film thickness from 5 nm to 10 μm, and conductivity type, enabling precise substrate engineering for advanced semiconductor or photonic device fabrication.
Positive
- Wide SiO2 thickness range: Film thickness selectable from 5 nm to 10 μm, with conventional 100–500 nm range available, accommodating both thin-gate and thick-passivation applications.
- Multiple orientation and doping options: Three crystal orientations and P-type, N-type, or undoped high-resistivity variants are offered, enabling process optimization across a diverse range of device research.
Trade-offs
- Pre-order specification confirmation required: Crystal orientation, film thickness, conductivity type, resistivity band, and processing route (oxidation furnace or PECVD) must all be confirmed before quotation—no off-the-shelf standardized stock is implied.
- Processing route dependency: The chosen deposition method (oxidation furnace or PECVD) will affect film density, interface quality, and thermal budget, requiring users to align process selection with their downstream device fabrication requirements.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
