Oxidized Silicon Wafer 6 Inch Double-Side ATOMFAIR®

Quotation requires confirmed wafer size, crystal orientation, conductivity type, and target resistivity band. Processing route and any custom dimensions must be specified before quotation.

• Specification confirmation: Confirm the required wafer size, surface configuration, crystal orientation, conductivity type, and target resistivity band before quotation.
• Processing route confirmation: Specify whether thermal oxidation or PECVD processing is required for the wafer.
• Compatibility confirmation: Confirm the substrate, surface treatment, and intended integration requirements for the selected item.
• Quantity confirmation: Include the required specification and quantity when requesting quotation support.

Confirm wafer specification, processing route, compatibility, and quantity before requesting a quotation. Use the confirmed details to match the target wafer to intended substrate and integration requirements.

Required Equipment: Technical sales team

1. Confirm required specification
   Confirm the required wafer size, surface configuration, crystal orientation, conductivity type, and target resistivity band before quotation.
2. Specify processing method
   Specify whether thermal oxidation or PECVD should be used for wafer processing.
3. Verify compatibility
   Confirm the substrate, surface treatment, and intended integration requirements for the selected item.
4. Request quotation
   Include the required specification and quantity when requesting quotation support.

The 6-inch double-side oxidized silicon wafer supports <100>, <111> and <110> crystal orientations with N-type, P-type or undoped high-resistivity options, processed via thermal oxidation or PECVD. The heavily doped resistivity (<0.001 ohm·cm) provides a low-resistance substrate for sensitive device layers, but the multiple specification variables—orientation, conductivity type, resistivity band, and processing method—require pre-order technical confirmation to ensure compatibility.

Positive

• Double-side oxidation surface: Double-side oxidation allows simultaneous processing on both wafer faces, useful for MEMS, passivation, or etch-stop layers where symmetric oxide thickness or barrier properties are required.
• Wide resistivity and doping range: Resistivity spans from heavily doped (<0.001 ohm·cm) to undoped high-resistivity (>100–20000 ohm·cm), enabling use in high-frequency, power, or low-loss device applications where controlled substrate conductivity is critical.

Trade-offs

• Specification confirmation required before order: Crystal orientation, conductivity type, resistivity band, and processing method (thermal oxidation vs. PECVD) must be explicitly confirmed at quotation stage to avoid mismatch with downstream lithography, doping, or deposition processes.
• Custom dimensions add lead time: Size customization is supported but requires confirmation, which may extend procurement lead time and require additional specification validation for handling or tool compatibility.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).