Oxidized Silicon Wafer 4 Inch Double-Side ATOMFAIR®

The wafer must be specified with crystal orientation, conductivity type, and resistivity prior to processing. Thermal oxidation or PECVD processing routes each impose distinct compatibility requirements for substrate and surface treatment.

• Crystal Orientation and Doping Constraints: The wafer's crystal orientation (<100>, <111>, or <110>) and conductivity type (N-type, P-type, or undoped high-resistivity) must be selected to match the intended device fabrication process.
• Resistivity Range Constraints: Resistivity is categorized into heavily doped (<0.001 ohm.cm), lightly doped (1-100 ohm.cm), or undoped (>100-20000 ohm.cm) bands, each with specific limits for the intended application.
• Processing Method Compatibility: Thermal oxidation and PECVD processing routes require individual confirmation of substrate compatibility and surface treatment integration.
• Customization and Integration Requirements: Size customization and specific processing parameters must be confirmed with the supplier to ensure proper integration with the target substrate.

This 4-inch double-side oxidation silicon wafer provides thermal oxidation or PECVD processed SiO2 layers on both surfaces, with options for <100>, <111>, or <110> orientation and N-type, P-type, or undoped high-resistivity substrates, requiring careful specification of resistivity band for process compatibility.

Positive

• Double-side processed oxide layer: Thermal oxidation or PECVD deposition on both wafer faces provides symmetric dielectric layers, useful for back-to-front isolation or dual-gate test structures without additional processing steps.
• Multiple orientation and doping options: Availability of <100>, <111>, and <110> crystal orientations combined with N-type, P-type, or undoped high-resistivity substrates enables matching to specific epitaxial or device requirements.

Trade-offs

• Specification confirmation required before order: Crystal orientation, conductivity type, and target resistivity band must be confirmed before quotation, introducing a pre-purchase engineering review step that delays procurement.
• Wide resistivity range impacts process repeatability: Resistivity spans from <0.001 ohm.cm to 20000 ohm.cm across heavily doped, lightly doped, and undoped grades; selecting an unspecified band may cause variability in downstream oxidation rate or device breakdown voltage.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).