12 Inch Single-Layer Continuous Film CVD MoS2 Thin Film on SiO2/Si SubstrateProduct Type: Single-Layer Continuous Film
Research-grade laboratory product
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Supplier: Atomfair
Brand: ATOMFAIR®
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This single-layer continuous film requires careful handling to avoid mechanical damage. The film is transferable to specified substrates including PET, PI, ITO, FTO, glass, and metal using appropriate transfer techniques.
- Substrate Compatibility: The film is initially on SiO2/Si with 300 nm oxide layer and can be transferred to PET, PI, ITO, FTO, glass, and metal substrates.
- Layer Integrity: The film is a single-layer continuous film with typical grain size of several tens to approximately one hundred micrometers per side.
- Semiconductor Type: The undoped MoS2 is an n-type semiconductor with a direct band gap of approximately 1.85 eV in monolayer form.
What is the band gap of the single-layer MoS2 film and how does it differ from bulk MoS2?
The monolayer MoS2 film has a direct band gap of approximately 1.85 eV, whereas bulk MoS2 has an indirect band gap of approximately 1.23 eV. This direct band gap in the monolayer enables efficient light absorption and emission, making it suitable for optoelectronic devices such as photodetectors and light-emitting diodes.
Can the CVD MoS2 film be transferred to substrates other than the SiO2/Si wafer?
Yes, the film is transfer-compatible with PET, PI, ITO, FTO, glass, and metal substrates, allowing integration into flexible electronics, transparent conductors, and custom device architectures. This transfer capability is explicitly listed in the product specifications.
What is the typical grain size of the single-layer MoS2 film?
The triangular single-crystal grains have a typical size ranging from several tens to approximately one hundred micrometers per side. This grain size is critical for device uniformity, charge carrier mobility, and overall performance in microelectronic and optoelectronic applications.
This 12-inch single-layer continuous film CVD MoS2 on SiO2/Si (300 nm oxide) provides a direct bandgap of ~1.85 eV suitable for optoelectronic and microelectronic devices, but its CVD-grown triangular grains (tens to ~100 μm) and transfer dependency introduce process integration constraints.
Positive
- Direct bandgap monolayer advantage: The monolayer form exhibits a direct bandgap of approximately 1.85 eV, versus the indirect 1.23 eV in bulk, enabling efficient light absorption and emission for optoelectronic and photonic device applications.
- Large-area continuous film coverage: The 12-inch single-layer continuous film on a 300 nm SiO2/Si substrate provides uniform, wafer-scale MoS2 coverage, supporting scalable integration into microelectronic and sensing devices without grain boundary interruptions in critical areas.
Trade-offs
- Grain size variability constraints: Triangular single-crystal grains range from several tens to approximately one hundred micrometers per side, resulting in non-uniform domain boundaries that may limit device performance uniformity in applications requiring perfect single-crystal areas.
- Transfer process dependency: Integration onto alternative substrates such as PET, PI, ITO, FTO, glass, or metals requires a separate transfer step, introducing potential contamination, wrinkle formation, and reduced film integrity that must be managed per application.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
