CVD MoS2 Multilayer Thin Film 2 in on SiO2/Si ATOMFAIR®

$1,342.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade CVD MoS2 multilayer continuous film on 2 inch SiO2/Si with 300 nm oxide; undoped n-type semiconductor for device studies. Order now.

2 Inch Multilayer Continuous Film CVD MoS2 Thin Film on SiO2/Si Substrate

Product Type: Multilayer Continuous Film

Research-grade laboratory product

Product Overview

2 inch multilayer continuous film CVD MoS2 thin film on a SiO2/Si substrate with a 300 nm oxide layer is based on undoped layered n-type molybdenum disulfide.

The product information also lists triangular single-crystal grains, transfer-compatible substrate options and research fields including optoelectronic devices, microelectronic devices, biosensing and chemical sensing.

Performance Features

Chemical vapor deposition (CVD) production method
Undoped MoS2 layered n-type semiconductor
Multilayer Continuous Film configuration
Transfer-compatible PET, PI, ITO, FTO, glass and metal substrates listed

Technical Specifications

Parameter	Specification / Available Values
Atomfair Model	AF-MOS2-2IN-ML
Size	2 inch
Substrate	SiO2/Si with a 300 nm oxide layer
Production Method	Chemical vapor deposition (CVD)
Material	Undoped molybdenum disulfide (MoS2), a layered n-type semiconductor
Band Gap	Bulk: approximately 1.23 eV, indirect; monolayer: approximately 1.85 eV, direct
Product Form	Multilayer Continuous Film
Typical Grain Size	Several tens to approximately one hundred micrometers per side for triangular single-crystal grains
Transfer-Compatible Substrates	PET, PI, ITO, FTO, glass and metal substrates can be obtained through transfer
Listed Fields	Optoelectronic devices, microelectronic devices, biosensing and chemical sensing

Quotation Confirmation

2 inch size, the multilayer continuous film form, the SiO2/Si substrate with 300 nm oxide layer and any transfer-compatible substrate requirement should be confirmed for quotation. The requested quantity should also be stated.

MODEL AND SPECIFICATION CONFIRMATION: Confirm the selected size, material system and configuration before quotation.

COMPATIBILITY CONFIRMATION: Confirm the substrate, surface treatment and intended integration requirements for the selected item.

QUANTITY CONFIRMATION: Include the required specification and quantity when requesting quotation support.

LABORATORY PROCUREMENT SUPPORT

For model selection, substrate matching or configuration confirmation, contact our technical sales team.

E-MAIL: inquiry@atomfair.com

Supplier: Atomfair

Brand: ATOMFAIR®

This research-grade thin-film item is intended for transfer-based integration onto specified flexible or rigid substrate classes. Substrate matching, surface treatment, and intended integration requirements must be confirmed before processing.

Transfer-compatible substrate classes: The continuous film can be transferred onto PET, PI, ITO, FTO, glass, and metal substrates.
Pre-integration confirmation: Confirm substrate matching, surface treatment, and intended integration requirements before processing.

FAQ

What is the band gap of the multilayer MoS2 thin film and how does it differ from monolayer MoS2?

The bulk multilayer MoS2 has an indirect band gap of approximately 1.23 eV, while monolayer MoS2 has a direct band gap of approximately 1.85 eV as stated in the product specifications. This transition from indirect to direct band gap significantly affects optoelectronic properties such as photoluminescence and absorption. The product is a multilayer continuous film, so the band gap is indirect at ~1.23 eV.

Can this CVD MoS2 film be transferred to other substrates for device integration?

Yes, the product is transfer-compatible with substrates including PET, PI, ITO, FTO, glass, and metal as listed in the technical specifications. The CVD-grown MoS2 film on SiO2/Si with 300 nm oxide layer can be transferred to these substrates, enabling integration into flexible electronics, transparent conductive electrodes, or sensing platforms. The standard product is supplied on SiO2/Si, but transfer is possible for specific applications.

What is the typical grain size of the MoS2 crystals in this continuous film?

The multilayer continuous film consists of triangular single-crystal grains with typical sizes ranging from several tens to approximately one hundred micrometers per side as stated in the product specifications. This grain size influences the electrical performance, uniformity, and reproducibility of the film for device fabrication in optoelectronic or microelectronic applications.

Assessment

CVD-grown multilayer continuous film MoS2 on 2-inch SiO2/Si (300 nm oxide) provides a large-area, transfer-compatible n-type semiconductor platform with an indirect band gap of ~1.23 eV, suitable for optoelectronic, microelectronic, and sensing research applications.

Positive

Large-area continuous film: The 2-inch diameter continuous multilayer film eliminates the need for grain-boundary or coverage considerations inherent to isolated flakes, providing a uniform large-area active layer for device-scale testing and integration.
Transfer compatibility with multiple substrates: The CVD MoS2 film can be transferred onto PET, PI, ITO, FTO, glass, or metal substrates, enabling flexible or transparent device configurations without requiring direct growth on these target surfaces.

Trade-offs

Transfer process reliability required: Utilizing the film on non-native substrates necessitates a wet or dry transfer step that can introduce wrinkles, residues, or mechanical damage, requiring careful process optimization to maintain film integrity.
Bulk indirect band gap limits photonic efficiency: With a 1.23 eV indirect band gap, the multilayer film exhibits lower photoluminescence quantum yield compared to monolayer direct-gap MoS2, which may constrain performance in light-emitting or high-efficiency photodetection applications.

Quality Standards & Performance Verification

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Shipping & Returns

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).