Aluminum Nitride Ceramic Substrate, 50 mm x 50 mm x 0.5 mm, Pack of 10Product Type: Technical ceramic substrate
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
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How does the thermal conductivity of this aluminum nitride substrate compare to standard alumina substrates, and what are the implications for heat dissipation in power electronics?
This AlN substrate offers thermal conductivity above 170 W/(m·K), which is approximately 7–10 times higher than alumina ceramic. This enables significantly superior heat dissipation, making it well-suited for high-power density electronic modules where thermal management is critical.
Is the coefficient of thermal expansion of this AlN substrate matched to silicon for direct bonding in power module applications?
Yes, the thermal expansion of this aluminum nitride ceramic substrate is designed to be close to that of silicon. This compatibility reduces thermal stress during soldering or sintering, improving reliability in power module and electronic component assemblies.
What are the mechanical strength and surface finish specifications of this 0.5 mm thick AlN substrate, and how do they affect handling during processing?
The substrate has a flexural strength exceeding 400 MPa, a Vickers hardness of 11 GPa, and a surface roughness Ra of 0.2–0.3 µm. While these properties provide excellent durability and a smooth surface for thin-film deposition, the high hardness and thinness require careful handling to avoid edge chipping or fracture during cutting, cleaning, or mounting.
This 50 mm x 50 mm x 0.5 mm aluminum nitride ceramic substrate, in a pack of 10, delivers thermal conductivity above 170 W/(m·K), approximately 7–10 times that of alumina, with a thermal expansion coefficient close to silicon, making it suitable for power module and electronic component heat-dissipation applications; however, its specified surface roughness of 0.2–0.3 μm Ra and 15 kV/mm breakdown voltage define clear handling and dielectric constraints for lab integration.
Positive
- High thermal conductivity: Thermal conductivity exceeding 170 W/(m·K) at 25°C is about 7-10 times higher than alumina ceramic, enabling efficient heat dissipation in power electronics and high-density circuits.
- CTE match to silicon: Thermal expansion coefficient is close to that of silicon, reducing thermomechanical stress during power module assembly and thermal cycling.
Trade-offs
- Surface roughness constraints: Surface roughness Ra of 0.2–0.3 µm may require post-processing polish or coating for applications demanding finer finishes, such as thin-film metallization or direct bond copper.
- Dielectric breakdown limit: DC breakdown voltage of 15 kV/mm sets a thickness-dependent maximum operating voltage; for this 0.5 mm substrate, dielectric withstand is approximately 7.5 kV, which must be respected in high-voltage designs.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
