Aluminum Nitride Ceramic Substrate, 50 mm x 50 mm x 0.38 mm, Pack of 10Product Type: Technical ceramic substrate
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
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What is the calculated breakdown voltage for a 0.38 mm thick aluminum nitride substrate based on the specified dielectric strength?
Based on the minimum dielectric strength of ≥15 kV/mm, a 0.38 mm thick substrate yields a breakdown voltage of at least 5.7 kV. This is derived from the product specification: Breakdown voltage, DC ≥15 kV/mm.
Does the thermal expansion coefficient of this aluminum nitride substrate match that of silicon for power module packaging?
Yes, the thermal expansion of aluminum nitride is close to that of silicon, as stated in the product description: 'Thermal expansion is close to silicon for power module and electronic component workflows.' This minimizes thermal stress in power module assemblies.
What are the mechanical properties of this 0.38 mm thick aluminum nitride substrate that influence handling and machining?
The substrate features flexural strength >400 MPa, fracture toughness 3.0 MPa√m, and Vickers hardness 11 GPa. While strong, the 0.38 mm thickness and brittle nature require careful handling to avoid fracture during cutting or mounting.
This aluminum nitride ceramic substrate offers thermal conductivity >170 W/(m·K), roughly 7-10 times that of alumina, with a coefficient of thermal expansion close to silicon, making it suitable for power module and high-heat-dissipation electronic substrates. The 50 mm x 50 mm x 0.38 mm format and Ra surface roughness of 0.2-0.3 µm require careful handling to avoid chipping during processing.
Positive
- High thermal conductivity vs. alumina: Thermal conductivity above 170 W/(m·K) is approximately 7-10 times higher than alumina ceramic, enabling efficient heat dissipation in power electronics and LED substrates.
- CTE match with silicon: Thermal expansion coefficient close to silicon reduces thermo-mechanical stress in power module and electronic component assemblies, improving reliability under thermal cycling.
Trade-offs
- Fragile thin geometry: At 0.38 mm thickness, the substrate is mechanically fragile and requires careful handling during cutting, mounting, or metallization to avoid fracture or edge chipping.
- Surface roughness constraint: As-sintered surface roughness Ra of 0.2-0.3 µm may require additional polishing or surface treatment for applications demanding very fine circuitry or direct bond copper (DBC) lamination.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
