Aluminum Nitride Ceramic Substrate, 10 mm x 10 mm x 0.38 mm, Pack of 10Product Type: Technical ceramic substrate
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
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What is the thermal conductivity of the ATOMFAIR aluminum nitride ceramic substrate and how does it compare to alumina?
This substrate provides a thermal conductivity above 170 W/(m·K) at 25°C, which is approximately 7-10 times higher than typical alumina ceramic substrates. This enables efficient heat dissipation in power electronics and high-temperature applications.
How does the thermal expansion of this aluminum nitride substrate match silicon for power module assembly?
The thermal expansion coefficient of this aluminum nitride ceramic is close to that of silicon, reducing thermal stress during soldering or bonding in power module and electronic component workflows. This compatibility helps improve reliability in semiconductor packaging.
What are the surface roughness and mechanical properties of this substrate that affect metallization or thin-film processing?
The surface roughness Ra is 0.2-0.3 µm, and the substrate has a flexural strength >400 MPa, fracture toughness 3.0 MPa√m, and Vickers hardness 11 GPa. These properties support reliable metallization, coating, and custom-shape processing without fracturing.
This 10 mm x 10 mm x 0.38 mm aluminum nitride ceramic substrate offers thermal conductivity exceeding 170 W/(m·K), roughly 7–10 times that of alumina, with a coefficient of thermal expansion closely matched to silicon, making it suitable for high-power electronic heat-dissipation and insulating substrate applications.
Positive
- High thermal conductivity >170 W/(m·K): Provides about 7–10 times higher thermal conductivity than alumina ceramic, enabling efficient heat dissipation in power modules and electronic assemblies.
- Thermal expansion matched to silicon: Coefficient of thermal expansion close to silicon reduces thermomechanical stress during thermal cycling, improving reliability in semiconductor and power module packaging.
Trade-offs
- Surface roughness 0.2–0.3 µm as-sintered: As-received surface roughness Ra of 0.2–0.3 µm may require additional polishing or metallization processing for applications demanding smoother interfaces, such as thin-film metallization or direct bonding.
- Fracture toughness of 3.0 MPa·√m: Moderate fracture toughness of 3.0 MPa·√m indicates inherent brittleness; careful handling and precise machining are required to avoid edge chipping or cracking during dicing or assembly.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
