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N type Monocrystalline Silicon Wafer – 4 inch (100 mm) <100> Single-Side Polished
Product Type: Silicon wafer
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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How do the CZ and FZ material options differ for this 4-inch N-type <100> wafer?
For model AF-SIW-N4100SSP, this wafer is offered in 6N monocrystalline silicon with either CZ or FZ growth as an available material option. The listing does not publish separate CZ versus FZ performance values, so the growth method is treated as a selectable specification when ordering rather than a fixed property.
What resistivity ranges can be specified for this N-type <100> wafer?
Selectable resistivity values are 0.001-0.005 ohm.cm, 1-10 ohm.cm, >10 ohm.cm, >5K ohm.cm, and >10K ohm.cm. The ordering instructions require you to select the wafer configuration along with the final resistivity requirement.
What thickness and flatness tolerances are specified for this 4-inch wafer?
The wafer is specified with a typical thickness of 500 ±25 um, TTV <10 um, BOW <10 um, and WARP <15 um. Front-side roughness is Ra <0.5 nm, and the back side is etched.
This 4-inch N-type <100> monocrystalline silicon wafer offers tight geometry specifications (TTV <10 µm, BOW <10 µm, WARP <15 µm) and a broad resistivity range, making it suitable for a variety of semiconductor research applications. However, the single-side polished finish and ±25 µm thickness tolerance impose constraints for processes requiring double-side polish or extremely uniform substrate thickness.
Positive
- Tight geometry specifications: TTV <10 µm, BOW <10 µm, and WARP <15 µm ensure a highly planar substrate critical for photolithography and thin-film deposition uniformity.
- Broad resistivity selection: Available resistivity values ranging from 0.001-0.005 ohm.cm to >10K ohm.cm allow the same wafer platform to be used for low-resistance contact layers or high-resistance RF and detector substrates.
Trade-offs
- Single-side polished finish: The back side is etched rather than polished, limiting suitability for applications requiring double-side polished surfaces such as optical transmission or double-sided lithography.
- Thickness tolerance of ±25 µm: The 500 ±25 µm thickness specification provides a 5% variation, which may be insufficient for processes demanding extremely tight substrate thickness uniformity, such as MEMS membrane fabrication.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
