Tin Selenide (SnSe) Powder 99.999% Purity 19μm ATOMFAIR®

Price range: $339.00 through $999.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

99.999% SnSe powder, -200 mesh with 19μm APS, steel-gray IV-VI semiconductor for thermoelectric, photovoltaic and memory-switching research. Order now.

SKU: AF-FM-E-SNSE-999P-SP00
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Atomfair Tin Selenide (SnSe) Powder, 99.999% Purity, -200 mesh (19 μm APS)


Atomfair Tin Selenide (SnSe) Powder, 99.999% Purity, -200 mesh (19 μm APS)

Product Description

Atomfair Tin Selenide (SnSe) Powder is supplied as a powder with 99.999% purity and -200 mesh (19 microns APS). It is intended for thermoelectric, low-cost photovoltaic and memory-switching-device research.

Technical Specifications

Parameter Specification / Available Values
Product Tin Selenide (SnSe) Powder
Chemical Formula SnSe
CAS Number 1315-06-6
EINECS / EC Number 215-257-6
Purity 99.999%
Specification -200 mesh (19 microns APS)
Molar Mass 197.67 g/mol
Appearance Steel-gray, odorless powder
Density 6.179 g/cm³
Melting Point 861 °C
Water Solubility Negligible
Band Gap 0.9 eV (indirect); 1.3 eV (direct)
Crystal Structure oP8
Physical State Powder

Customization & Ordering

Package availability, minimum order quantity, pricing, and lead time are confirmed during quotation.

Key Features and Advantages

  • IV–VI narrow-bandgap semiconductor with indirect and direct band gaps of 0.9 and 1.3 eV.
  • Steel-gray powder with a density of 6.179 g/cm³ and melting point of 861 °C.
  • Relevant to thermoelectric, low-cost photovoltaic and memory-switching-device research.

APPLICATION SCOPE: thermoelectric, low-cost photovoltaic and memory-switching-device research

DOCUMENTATION: COA and SDS can be provided upon request for batch-specific confirmation.

LABORATORY PROCUREMENT SUPPORT

For grade selection, particle-size confirmation, documentation support or custom specification review, contact our technical sales team.

E-MAIL: inquiry@atomfair.com

What are the direct and indirect band gaps of Atomfair Tin Selenide (SnSe) Powder, and how do they influence its application in thermoelectric versus photovoltaic research?

SnSe powder has an indirect band gap of 0.9 eV and a direct band gap of 1.3 eV. The indirect 0.9 eV gap is favorable for thermoelectric applications due to enhanced Seebeck coefficient, while the direct 1.3 eV gap aligns well with the solar spectrum for low-cost photovoltaic research, making the material versatile for both device types.

What is the particle size of this SnSe powder and how does it affect thin-film deposition or device fabrication?

The powder is specified as -200 mesh with an average particle size of 19 microns (APS). This fine particle size is suitable for techniques such as screen printing, drop casting, and thermal evaporation, but may require dispersion optimization to avoid agglomeration. The sub-20 micron size facilitates uniform film formation in laboratory-scale devices.

What storage and safety conditions are recommended for Tin Selenide (SnSe) powder to maintain its purity and integrity?

SnSe powder should be stored in a dry, sealed container in an inert atmosphere to prevent oxidation or moisture absorption, given its negligible water solubility. A Safety Data Sheet (SDS) is available upon request from Atomfair for detailed handling precautions, including recommended personal protective equipment and ventilation requirements.

Atomfair Tin Selenide (SnSe) Powder, 99.999% purity and -200 mesh (19 μm APS), is a narrow-bandgap IV–VI semiconductor with indirect and direct band gaps of 0.9 eV and 1.3 eV, respectively, making it suitable for thermoelectric, low-cost photovoltaic, and memory-switching-device research. Its high melting point of 861 °C and density of 6.179 g/cm³ support thermal stability in high-temperature processing, but the powder form requires careful handling to avoid airborne contamination and moisture uptake.

Positive

  • High-purity narrow-bandgap semiconductor: 99.999% purity with indirect and direct band gaps of 0.9 eV and 1.3 eV, enabling efficient charge carrier generation for thermoelectric and photovoltaic applications.
  • Thermal stability for high-temperature processing: Melting point of 861 °C and density of 6.179 g/cm³ provide structural integrity during sintering or thin-film deposition, reducing decomposition risks.

Trade-offs

  • Powder handling and contamination risk: As a fine powder (-200 mesh, 19 μm APS), it requires inert-atmosphere or glovebox handling to prevent airborne dispersion and oxidation during transfer.
  • Negligible water solubility limits wet processing: Negligible water solubility restricts use in aqueous-based synthesis or deposition methods, necessitating organic solvents or vacuum-based techniques for film formation.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Package

25g, 50g, 100g

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