Silicon Nitride Ceramic Substrate, 50 mm x 50 mm x 1 mmProduct Type: Technical ceramic substrate
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
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Silicon nitride ceramic substrate service is bounded by the manufacturer-stated use temperature range. Operating outside this range is outside the specified service envelope.
- Temperature operating limit: Do not use the substrate outside the specified -55 C to 850 C operating temperature range.
How does the combination of high fracture toughness and thermal conductivity in this silicon nitride substrate benefit thermal cycling reliability in power electronics?
The substrate's fracture toughness >6.5 MPa√m and thermal conductivity >60 W/(m·K) provide resistance to crack propagation under thermal stress while efficiently dissipating heat. Combined with a use temperature range of -55°C to 850°C and flexural strength >600 MPa, this silicon nitride ceramic is well-suited for high-thermal-cycle power module applications where alumina substrates may fail.
What size and thickness tolerances are available for this 50 mm x 50 mm x 1 mm silicon nitride substrate?
The product listing requires verification of size tolerance, thickness requirement, material grade, and surface finish before ordering. Atomfair provides technical sales support to confirm these parameters for specific applications. While the substrate is research-grade with high precision, exact tolerances are not published in the standard specification and must be requested.
What breakdown voltage can be expected from this 1 mm thick silicon nitride substrate for high-voltage isolation applications?
The specified breakdown voltage is >15 kV/mm, so for the 1 mm thickness, the substrate can withstand >15 kV DC or peak AC. This high dielectric strength, combined with thermal conductivity >60 W/(m·K) and operating temperature up to 850°C, makes it suitable for high-voltage isolation in power electronics and insulated-gate bipolar transistor (IGBT) modules.
This 50 mm x 50 mm x 1 mm silicon nitride ceramic substrate offers a flexural strength above 600 MPa, fracture toughness of 6.5 MPa·√m, and thermal conductivity above 60 W/(m·K), making it suitable for high-stress, high-temperature insulation applications up to 850°C.
Positive
- High mechanical and thermal performance: Flexural strength >600 MPa and thermal conductivity >60 W/(m·K) provide simultaneous mechanical robustness and efficient heat dissipation in demanding substrate applications.
- Wide operating temperature range: Usable from -55°C to 850°C, enabling deployment in thermal cycling environments without loss of mechanical integrity or insulation properties.
Trade-offs
- Brittle fracture risk under point loading: Despite high fracture toughness (6.5 MPa·√m), ceramic substrates remain susceptible to catastrophic failure from localized impact or improper clamping during handling.
- Post-processing dependency for assembly: Metallization, coating, or custom shaping are required for integration into most electronic assemblies; as-delivered bare substrates require additional processing steps.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
