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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) R/<02-21> off-cut 1 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the significance of the R/<02-21> off-cut orientation and 1-degree angle for thin film deposition on this sapphire substrate?
The R/<02-21> off-cut orientation and 1-degree angle are specifically selected to control step-terrace formation and minimize lattice mismatch during epitaxial thin film growth. This off-cut configuration promotes uniform nucleation and reduces defect density. The front-side is epi-ready with Ra <0.3 nm, providing the atomically smooth surface required for high-quality deposition.
What are the dimensional tolerances and flatness specifications for this 2-inch sapphire substrate, and how do they impact compatibility with standard wafer processing equipment?
This substrate has a diameter of 2 inches (50.8 mm), thickness 430 +/-25 um, primary flat 16 mm, TTV <10 um, BOW <15 um, and WARP <15 um. These tight tolerances ensure compatibility with standard semiconductor tools that require precise wafer dimensions and minimal warp, reducing errors during photolithography, handling, and thin film deposition.
How should this single-side polished sapphire substrate be handled and stored to maintain the epi-ready front surface quality?
The epi-ready front side (Ra <0.3 nm) must be protected from contamination and scratches. Handle only with cleanroom gloves and store in a clean, dry environment inside the original packaging (1 piece/set). The back side is fine ground (Ra <1.2 um) and less sensitive, but care should be taken to avoid contact with the front surface.
This 2-inch off-cut sapphire substrate features high-purity monocrystalline Al2O3 (KY) with R/<02-21> off-cut orientation and 1-degree angle, single-side polished with epi-ready front surface (Ra <0.3 nm) and fine ground back side (Ra <1.2 um). It is suitable for epitaxial growth applications requiring a specific off-cut angle, but double-sided processing or stringent thickness uniformity needs may require additional consideration.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% ensures minimal contamination, critical for epitaxial growth and thin-film deposition applications.
- Epi-ready front-side surface: Front-side roughness Ra <0.3 nm provides a suitable template for high-quality epitaxial layers without additional polishing.
Trade-offs
- Single-side polished only: Back-side is fine ground (Ra <1.2 um) and not polished, which may require additional processing for applications needing double-side optical quality or bonding.
- Thickness tolerance and TTV constraints: Thickness tolerance of ±25 µm and TTV <10 µm may limit use in processes requiring extreme uniformity, such as ultra-thin substrate handling or advanced lithography.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
