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Sapphire Substrate – 4 inch (100 mm) C-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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How does the front-side roughness (Ra <0.3 nm) compare to the back-side roughness (Ra <1.2 μm) on the single-side polished sapphire substrate, and what are the implications for epitaxial film quality?
The front side is epi-ready with Ra <0.3 nm, while the back side is fine ground with Ra <1.2 μm. This differential ensures a smooth surface for epitaxial growth while providing a matte back side for handling and reduced optical interference.
What are the flatness specifications (TTV, BOW, WARP) for the 4-inch C-plane sapphire substrate, and how do they affect integration into thin-film deposition systems?
The substrate has TTV <10 μm, BOW <10 μm, and WARP <15 μm. These tight tolerances ensure uniform thickness and minimal bow, critical for maintaining consistent film deposition across the wafer and preventing stress-induced cracking.
What is the purpose of the A-plane 30 mm primary flat on the 4-inch C-plane sapphire substrate, and how does it affect wafer alignment and processing?
The primary flat is oriented on the A-plane at 30 mm length, providing a reference for crystallographic alignment during photolithography and dicing. This ensures repeatable orientation across multiple processing steps.
This 4-inch C-plane sapphire substrate offers >99.99% purity monocrystalline Al2O3 with an epi-ready front-side roughness below 0.3 nm and tight geometric tolerances (TTV <10 µm, BOW <10 µm, WARP <15 µm), making it suitable for high-precision epitaxial growth and device fabrication. The single-side polished finish and back-side fine grind (Ra <1.2 µm) define the operational trade-offs for double-sided applications.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% minimizes defect density and contamination in epitaxial layer growth, critical for optoelectronic and semiconductor device performance.
- Epi-ready front-side roughness: Front-side roughness Ra <0.3 nm meets epi-ready standards, enabling direct use for thin-film deposition without additional polishing steps.
Trade-offs
- Single-side polished only: Back-side is fine ground with Ra <1.2 µm; applications requiring double-side polished surfaces will need additional processing or a different product variant.
- Thickness tolerance ±25 µm: Standard thickness of 650 µm has a ±25 µm tolerance, which may require sorting or selection for applications demanding tighter thickness uniformity across substrates.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
