|
Sapphire Substrate – 6 inch (150 mm) C-Plane Double-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
What are the critical flatness specifications (TTV, BOW, WARP) for this 6-inch C-plane sapphire substrate and how do they impact epitaxial growth quality?
The substrate has TTV <10 µm, BOW <15 µm, and WARP <20 µm, ensuring minimal variation in thickness and curvature. These tight tolerances are critical for uniform thin film deposition in epitaxial processes, reducing defects and wafer breakage.
Is this sapphire substrate suitable for use as a seed layer in high-temperature GaN epitaxy given its C-plane orientation and double-side polished surface?
Yes, the C-plane orientation is standard for GaN epitaxy, and the double-side polished surface with front and back roughness Ra <0.3 nm (epi-ready) provides an atomically smooth template. The high-purity monocrystalline Al2O3 (>99.99%) ensures minimal contamination in high-temperature growth.
What handling precautions are required for this double-side polished sapphire substrate to preserve its epi-ready surface quality?
The double-side polished substrate has epi-ready surfaces with Ra <0.3 nm on both sides. To avoid contamination and scratches, use cleanroom protocols, edge-grip tweezers, and avoid contact with the polished faces. Packaging is 1 piece/set; cleaning options are available per order.
This 6-inch C-plane sapphire substrate offers high-purity monocrystalline Al2O3 (>99.99%) with double-side epi-ready polish (Ra <0.3 nm), making it suitable for epitaxial growth applications. However, single-wafer packaging and a ±25 µm thickness tolerance are operational considerations.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% ensures minimal contamination for sensitive epitaxial growth.
- Double-side epi-ready polish: Both front and back surfaces achieve Ra <0.3 nm, enabling immediate use for deposition without additional processing.
Trade-offs
- Single-wafer packaging unit: Supplied as 1 piece per set, requiring multiple orders for applications needing multiple substrates.
- Thickness tolerance of ±25 µm: Standard thickness of 1000 µm has a ±25 µm tolerance, which may necessitate sorting for thickness-sensitive processes.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).



