|
Sapphire Substrate – 4 inch (100 mm) R-Plane Single-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
What is the front-side surface roughness and how does it compare to the back-side finish for this R-plane sapphire substrate?
The front side is epi-ready with Ra <0.3 nm roughness, while the back side is fine ground with Ra <1.2 μm. This significant difference means the front side is suitable for epitaxial growth or high-precision thin film deposition, whereas the back side is optimized for handling and mounting without requiring additional polishing.
What are the standard and optional thicknesses for the 4-inch R-plane sapphire substrate, and how does thickness affect device processing?
The standard thickness is 650 ± 25 μm, with optional thicknesses of 225 μm, 430 μm, and 1000 μm. Thinner substrates (225 μm, 430 μm) reduce thermal resistance and allow better heat dissipation but increase fragility during handling; the 1000 μm option provides greater mechanical stability for applications requiring higher structural rigidity. Selection depends on the specific thermal and mechanical requirements of the device fabrication process.
What are the typical packaging and cleaning requirements for this single-side polished sapphire substrate to maintain epi-ready surface integrity?
The substrate is packaged 1 piece per set, and custom cleaning or packing preferences can be specified at order. Maintaining the front-side epi-ready roughness (Ra <0.3 nm) requires a cleanroom environment and contamination-free handling; contact the technical sales team (inquiry@atomfair.com) for specific cleaning protocols and packaging options to preserve surface quality during storage and transport.
This 4-inch R-plane sapphire substrate provides high-purity monocrystalline Al2O3 (>99.99%) with an epi-ready front-side polish (Ra <0.3 nm) and tight geometric tolerances (TTV <10 µm, BOW <10 µm, WARP <15 µm), enabling precise epitaxial growth and device fabrication. The single-side polish and fine-ground back-side (Ra <1.2 µm) require careful handling for double-side processing steps.
Positive
- High-purity monocrystalline Al2O3 with epi-ready finish: The >99.99% pure single-crystal sapphire with front-side roughness Ra <0.3 nm supports high-quality epitaxial layer growth for optoelectronic and semiconductor device applications.
- Tight flatness and thickness tolerances: TTV <10 µm, BOW <10 µm, and WARP <15 µm ensure uniform substrate geometry critical for photolithography, thin-film deposition, and wafer bonding processes.
Trade-offs
- Single-side polish limits double-side processing: The fine-ground back-side (Ra <1.2 µm) is not suitable for double-side polished applications; users must account for back-side roughness when mounting or performing back-side lithography.
- Standard thickness may exceed application requirements: The 650 ±25 µm standard thickness is relatively thick; optional thinner substrates (225, 430 µm) are available but may exhibit reduced mechanical stability during handling.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
