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Sapphire Substrate – 2 inch (50.8 mm) R-Plane Double-Side Polished
Product Type: Sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What thickness options are available for the 2-inch R-Plane sapphire substrate and how does thickness affect wafer bow or warp?
The substrate is available in standard thickness 430 ± 25 µm and optional thicknesses of 200 µm, 400 µm, and 1000 µm. All thickness options maintain the same flatness tolerances: TTV <10 µm, BOW <10 µm, and WARP <10 µm, as specified in the product datasheet.
What is the primary flat orientation for this R-Plane sapphire substrate and why is it important for alignment in device fabrication?
The substrate features an A-plane 16 mm primary flat. This crystallographic flat provides a reference for aligning the R-Plane wafer during subsequent lithography, epitaxy, or dicing steps, ensuring consistent orientation across multiple processing tools.
What are the surface roughness specifications for the double-side polished sapphire substrate and what handling precautions are required to maintain epi-ready quality?
Both front and back sides are polished to epi-ready roughness with Ra <0.3 nm. To preserve this ultra-smooth surface, the substrate is packaged as 1 piece/set and cleaning or customized packing options are available upon request. Cleanroom handling and particle-free storage are recommended to prevent contamination or scratches.
This 2-inch R-Plane double-side polished sapphire substrate provides high-purity monocrystalline Al2O3 (>99.99%) with epi-ready surface roughness (Ra <0.3 nm) on both sides, enabling high-quality epitaxial deposition. The tight geometric tolerances (TTV, BOW, WARP <10 um) ensure consistent processing, though the fixed R-plane orientation and standard thickness tolerance of +/-25 um impose constraints for certain applications requiring alternative crystal planes or tighter thickness control.
Positive
- High-purity monocrystalline Al2O3: >99.99% purity minimizes contamination risks during epitaxial growth and thin-film deposition processes.
- Double-side epi-ready polish: Ra <0.3 nm on both front and back sides enables high-quality film deposition on either surface without additional polishing steps.
Trade-offs
- Fixed R-Plane orientation: The R-plane crystallographic orientation limits compatibility with epitaxial materials and device designs that require C-plane or A-plane substrates, narrowing application scope.
- Standard thickness tolerance: The standard thickness of 430 +/-25 um may not meet precision requirements for ultra-thin film or MEMS applications where tighter thickness control is needed.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
