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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/M off-cut 6 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the significance of the 6° off-cut angle and C/M orientation for epitaxial growth on this sapphire substrate?
The 6° off-cut angle and C/M orientation provide a controlled miscut that promotes step-flow growth and reduces antiphase domains in III-Nitride and other heteroepitaxial layers. The off-cut orientation and angle are selectable specifications, and the specific C/M off-cut is commonly used for GaN and related materials. This substrate is supplied as high-purity monocrystalline Al2O3 (KY) with an epi-ready front-side roughness of Ra <0.3 nm.
Can this single-side polished sapphire substrate be used for both front-side epitaxy and back-side processing?
Yes, the front side is epi-ready with Ra <0.3 nm, suitable for direct epitaxial growth, while the back side is fine ground with Ra <1.2 μm, allowing for thermal management or mechanical mounting. The substrate's flatness parameters (TTV <10 μm, BOW <15 μm, WARP <15 μm) ensure compatibility with photolithography and bonding processes. The 2-inch diameter with a 16 mm primary flat is standard for many deposition and characterization tools.
What are the dimensional tolerances that affect tool compatibility for this substrate?
The substrate measures 2 inches (50.8 mm) in diameter with a 16 mm primary flat and a thickness of 430 ±25 μm. The tight TTV (<10 μm), BOW (<15 μm), and WARP (<15 μm) ensure proper vacuum chucking and alignment in deposition, lithography, and metrology tools. The primary flat orientation must be aligned with the off-cut direction, as the off-cut orientation is C/M at 6 degrees.
This 2-inch off-cut sapphire substrate offers high-purity monocrystalline Al2O3 with a 6° C/M off-cut, epi-ready front-side roughness (Ra<0.3 nm), and tight geometric tolerances (TTV<10 μm, BOW<15 μm, WARP<15 μm), suitable for research-grade epitaxial thin-film growth.
Positive
- High-purity monocrystalline Al2O3 substrate: ≥99.99% purity and KY method growth ensure low defect density for epitaxial thin-film deposition.
- Epi-ready front-side surface finish: Front-side roughness Ra<0.3 nm enables direct use for epitaxial growth without additional polishing.
Trade-offs
- Single-side polished only: Back-side is fine ground with Ra<1.2 μm, limiting optical transmission or double-sided processes without additional polishing.
- Off-cut angle constraints: The 6° C/M off-cut is optimized for specific epitaxial growth; may not be suitable for applications requiring exact on-axis orientation.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
