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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 6 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This off-cut sapphire substrate is supplied with a C/A off-cut angle of 6° and a single-side polished surface. The front-side roughness is epi-ready at Ra <0.3 nm, and flatness parameters are maintained within TTV <10 µm, BOW <15 µm, and WARP <15 µm.
- Surface Roughness Constraint: The front-side surface roughness must be below 0.3 nm Ra to meet epi-ready specifications.
- Off-Cut Angle Constraint: The C/A off-cut angle of 6° must be maintained for epitaxial alignment.
- Flatness Constraint: The total thickness variation (TTV) must be less than 10 µm to ensure uniform substrate thickness.
- Bow and Warp Constraint: The bow and warp must each remain below 15 µm to avoid distortion during processing.
What is the purpose of the 6-degree off-cut angle and C/A orientation on this sapphire substrate?
The 6-degree off-cut angle and C/A orientation are designed to control step-flow growth modes and reduce antiphase boundaries during epitaxial deposition of nitride or oxide thin films. The source specifies a high-purity monocrystalline Al2O3 (KY) substrate with C/A off-cut orientation and 6-degree angle, directly supporting these applications.
How do the front-side and back-side roughness specifications differ and what do they imply for substrate use?
The front-side is epi-ready with Ra <0.3 nm, suitable for direct epitaxial growth, while the back-side is fine ground with Ra <1.2 μm, providing mechanical stability without compromising the front surface. These values are explicitly stated in the technical specifications.
What are the critical dimensional tolerances for this 2-inch off-cut sapphire substrate?
The substrate has a diameter of 2 inch (50.8 mm), thickness 430 ±25 μm, primary flat 16 mm, TTV <10 μm, BOW <15 μm, and WARP <15 μm. These tolerances ensure compatibility with standard wafer handling equipment and deposition systems, as listed in the product specifications.
This off-cut sapphire substrate offers >99.99% pure monocrystalline Al2O3 with an epi-ready front surface (Ra <0.3 nm) and a fine ground back side, making it suitable for single-sided epitaxial growth or device fabrication at a fixed 6-degree C/A off-cut, but with constraints on double-sided optical or polishing applications.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% (KY-grown) minimizes impurity incorporation during epitaxial growth and high-temperature processing.
- Epi-ready front-side surface: Front-side roughness Ra <0.3 nm meets requirements for thin film deposition and device fabrication without additional polishing.
Trade-offs
- Fine ground back-side surface: Back-side roughness Ra <1.2 um limits double-sided optical or epitaxial applications; additional polishing may be required for back-side use.
- Fixed 6-degree off-cut angle: The off-cut angle is fixed at 6 degrees, which may not be optimal for all epitaxial or lattice-matching conditions, reducing flexibility for varied applications.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
