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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 1.5 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This off-cut sapphire substrate exhibits precise crystallographic orientation and surface finish specifications critical for epitaxial thin film deposition. Dimensional tolerances and flatness parameters must be maintained to ensure uniform growth and compatibility with processing equipment.
- Surface Finish Constraint: Front-side surface is epi-ready with Ra <0.3 nm, requiring protection from particulate contamination and chemical damage.
- Crystallographic Orientation Constraint: Off-cut orientation of C/A at 1.5 degrees dictates the in-plane crystal alignment for epitaxial layer growth.
- Thickness and TTV Constraint: Thickness tolerance of 430 ±25 um and TTV less than 10 um ensure consistent thermal contact and uniformity across the substrate.
- BOW and WARP Constraint: BOW and WARP limits of less than 15 um each prevent mechanical stress and focusing issues during vacuum processing.
- Primary Flat Alignment Constraint: Primary flat of 16 mm length provides a reference for crystallographic orientation and handling alignment.
What geometric tolerances are specified for Atomfair's 2-inch C/A off-cut 1.5-degree sapphire substrate?
The 2-inch (50.8 mm) substrate is specified with a 430 ±25 µm thickness, 16 mm primary flat, <10 µm TTV, <15 µm BOW, and <15 µm WARP. These diameter-specific values are provided in the technical specification for incoming inspection and process matching.
What surface finish is supplied on the front and back sides of this single-side polished sapphire substrate?
The front side is specified as epi-ready with Ra <0.3 nm, while the back side is fine ground with Ra <1.2 µm. This single-side polished configuration means the front surface is polished for epitaxy-oriented work and the back surface is not polished to the same grade.
What off-cut orientation and angle are available for this 2-inch sapphire substrate?
The substrate is specified as >99.99% high-purity monocrystalline Al2O3 (KY) with a C/A off-cut orientation and a 1.5-degree off-cut angle. Off-cut orientation and angle are presented as selectable specifications on the product page, allowing the exact orientation requirement to be identified before ordering.
This 2-inch C/A off-cut sapphire substrate (1.5° angle) offers high-purity monocrystalline Al2O3 with epi-ready front-side roughness (Ra<0.3 nm) and tight geometric tolerances (TTV<10 um, BOW<15 um, WARP<15 um), making it suitable for epitaxial growth and thin-film deposition. However, single-side polishing and specific off-cut orientation require careful handling and application-specific matching.
Positive
- Epi-ready front-side surface: Front-side roughness Ra<0.3 nm enables direct use for epitaxial layer growth without additional polishing.
- Tight geometric tolerances: TTV<10 um, BOW<15 um, and WARP<15 um ensure uniform thickness and minimal warpage, critical for consistent thin-film deposition.
Trade-offs
- Single-side polished only: Back-side is fine ground (Ra<1.2 um) which may cause particulate contamination or require protective handling during processing.
- Specific off-cut orientation: C/A off-cut at 1.5° is optimized for certain epitaxial growth conditions; may not be suitable for other crystallographic orientations without additional characterization.
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To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
