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Gallium Nitride (GaN) Evaporation Material, Powder, 99.95%, 10 µm
Product Type: Compound Evaporation Material
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For material selection, deposition-source matching, pack-size confirmation or quotation support, contact our technical sales team.
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This material requires vacuum thin-film deposition using e-beam evaporation with a compatible liner, such as Al2O3. Thermal evaporation is not recommended unless a feasibility assessment confirms compatibility with the source hardware and material behavior.
- Crucible Liner Compatibility: Use an Al2O3 liner or a high-temperature crucible as specified by RFQ to avoid reactions with the e-beam hearth.
- Evaporation Method Preference: E-beam evaporation is preferred for this powder; thermal evaporation requires a feasibility request for quotation.
- Source Geometry Matching: Match the deposition source geometry and process route to the material's melting point and film requirements.
Why is e-beam evaporation preferred over thermal evaporation for GaN powder?
E-beam evaporation is preferred for GaN powder because the material has a melting point of 800°C and may decompose under thermal evaporation. The product specification recommends e-beam hearth with a compatible liner; thermal feasibility requires a request for quotation (RFQ).
What crucible liner material is specified for GaN evaporation material?
The product specifies an Al2O3 (alumina) high-temperature crucible liner by RFQ. An e-beam hearth with a compatible liner is recommended, and buyers should confirm deposition source geometry before ordering.
What is the particle size of this GaN powder and why is it important?
The particle size is 10 µm (Powder form). This specific size range is intended to support source loading and evaporation review, ensuring consistent and reliable deposition in e-beam evaporation systems.
Evaluated GaN evaporation powder (99.95%, 10 µm) for e-beam evaporation. Requires compatible liner and high-temperature crucible; decomposition risk at elevated temperatures necessitates careful process control.
Positive
- Defined material identity and purity: Gallium Nitride powder with 99.95% purity and 10 µm particle size enables clear procurement and deposition-process matching for vacuum thin-film workflows.
- E-beam evaporation guidance: Supplier specifies e-beam evaporation as preferred method and provides hardware compatibility notes (E-beam hearth with compatible liner, high-temperature crucible by RFQ), reducing trial-and-error.
Trade-offs
- Thermal decomposition risk: GaN does not melt congruently; the listed melting point of 800°C may indicate decomposition or require controlled conditions, necessitating process validation and high-temperature crucible qualification.
- Source hardware confirmation required: E-beam evaporation with compatible liner is required; thermal evaporation feasibility requires RFQ, and buyers must confirm deposition source geometry and liner material before ordering.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
