Aluminum Nitride Ceramic Substrate 0.38 mm ATOMFAIR®

$33.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade aluminum nitride ceramic substrate, 120×120×0.38 mm pack of 10, with >170 W/(m·K) thermal conductivity and Ra 0.2–0.3 μm. Order now.

Aluminum Nitride Ceramic Substrate, 120 mm x 120 mm x 0.38 mm, Pack of 10

Product Type: Technical ceramic substrate
Research-grade laboratory product

Product Overview

Aluminum nitride ceramic substrate provides high thermal conductivity above 170 W/(m?K), reliable insulation, low dielectric loss, and dimensional stability for electronic and electrical heat-dissipation applications.

This selected specification is supplied as an independent ceramic substrate item for buyers who need a defined size, thickness, and package configuration.

Performance Features

  • Thermal conductivity is about 7-10 times higher than alumina ceramic.
  • Low dielectric constant and low dielectric loss support insulating substrate use.
  • Thermal expansion is close to silicon for power module and electronic component workflows.
  • Non-toxic ceramic material with high-temperature and chemical corrosion resistance.

Technical Specifications

Parameter Specification / Available Values
Atomfair Model AF-ALN-S120P038
Product type Technical ceramic substrate
Material aluminum nitride ceramic
Selected specification 120 mm x 120 mm x 0.38 mm, Pack of 10
Surface roughness Ra 0.2-0.3 ?m
Density =3.3 g/cm?
Flexural strength >400 MPa
Fracture toughness 3.0 MPa?vm
Vickers hardness 11 GPa
Young modulus 320 GPa
Thermal conductivity, 25 ?C >170 W/(m?K)
Breakdown voltage, DC =15 kV/mm
QUOTATION DETAILS: Confirm AF-ALN-S120P038, 120 mm x 120 mm x 0.38 mm, Pack of 10, and required quantity before quotation.
CONFIGURATION CONFIRMATION: Verify size tolerance, thickness requirement, material grade, surface finish, and package format for this aluminum nitride ceramic substrate.
OPTION MATCHING: Confirm polishing, coating, metallization, or custom-shape needs when they are required for the application.
REQUEST DETAILS: Include the exact size, thickness, color or package detail, and quantity when requesting quotation support.
LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR?

How does the thermal expansion of this aluminum nitride substrate compare with silicon for power module assembly?

The thermal expansion of this aluminum nitride ceramic substrate is close to silicon, which supports power module and electronic component workflows by reducing thermal mismatch stresses. The substrate also provides thermal conductivity above 170 W/(m·K) at 25 °C, about 7–10 times higher than alumina ceramic, making it suitable for heat-dissipation applications.

What electrical insulation and mechanical strength specifications apply to the 120 mm x 120 mm x 0.38 mm aluminum nitride substrate?

This substrate has a DC breakdown voltage of ≥15 kV/mm, ensuring reliable electrical insulation. Mechanically, it exhibits flexural strength greater than 400 MPa, fracture toughness of 3.0 MPa·√m, Vickers hardness of 11 GPa, and Young modulus of 320 GPa, with a density of ≥3.3 g/cm³ and a surface roughness Ra of 0.2–0.3 µm.

What configuration details must be confirmed before ordering this Atomfair aluminum nitride ceramic substrate?

Before quotation, confirm the model AF-ALN-S120P038, the selected specification of 120 mm x 120 mm x 0.38 mm, pack of 10, and required quantity. Also verify size tolerance, thickness requirement, material grade, surface finish, and package format, and specify any polishing, coating, metallization, or custom-shape needs that apply to your application.

Aluminum nitride ceramic substrate, 120 mm x 120 mm x 0.38 mm, pack of 10: thermal conductivity above 170 W/(m·K) enables high-efficiency heat dissipation in power electronics and RF substrates, while the 0.2-0.3 μm surface finish supports reliable thin-film metallization.

Positive

  • Thermal conductivity 7-10X vs alumina: With >170 W/(m·K) at 25°C, this AlN substrate provides approximately 7-10 times higher thermal conductivity than alumina ceramic, enabling more efficient heat dissipation in high-power electronic modules and LED packages.
  • CTE matched to silicon: Thermal expansion coefficient close to silicon reduces thermomechanical stress in power module and electronic component assemblies, improving long-term reliability during thermal cycling.

Trade-offs

  • Brittle ceramic handling required: With flexural strength >400 MPa and fracture toughness of 3.0 MPa·√m, the substrate is mechanically robust for a ceramic but remains brittle; handling and dicing require careful fixturing to avoid edge chipping or fracture.
  • Surface finish may need refinement: The as-sintered surface roughness Ra of 0.2-0.3 μm supports basic thin-film deposition, but applications requiring ultra-smooth interfaces for high-frequency RF or laser diode packaging may necessitate additional polishing steps, which must be specified separately.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).