Aluminum Nitride Ceramic Substrate, 120 mm x 120 mm x 0.63 mm, Pack of 10Product Type: Technical ceramic substrate
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR?
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How does the thermal conductivity of this aluminum nitride substrate compare with alumina ceramic?
It is about 7-10 times higher than alumina ceramic. The datasheet specifies thermal conductivity above 170 W/(m·K) at 25 °C, which supports heat-dissipation and insulating substrate applications.
Why is this AlN substrate suited for power module and electronic component workflows?
Its thermal expansion is close to silicon, reducing thermal mismatch risk in power module and electronic component workflows. It also combines thermal conductivity above 170 W/(m·K) at 25 °C, low dielectric constant, low dielectric loss, and a DC breakdown voltage of ≥15 kV/mm.
What mechanical and surface specifications should be evaluated before handling or processing this ceramic substrate?
The substrate has surface roughness Ra 0.2-0.3 µm, flexural strength >400 MPa, fracture toughness 3.0 MPa·√m, Vickers hardness 11 GPa, Young modulus 320 GPa, and density ≥3.3 g/cm³. Confirm size tolerance, thickness, material grade, surface finish, and package format, and request polishing, coating, metallization, or custom-shape specifications if required for the application.
This 120 mm x 120 mm x 0.63 mm aluminum nitride ceramic substrate (SKU: AF-MA-C-ALNT-S120-P063) provides a thermal conductivity above 170 W/(m·K) at 25 °C, roughly 7–10 times higher than alumina, with a coefficient of thermal expansion close to silicon, making it suitable for power module and high-density electronic heat dissipation applications that require electrical insulation and dimensional stability.
Positive
- High thermal conductivity for heat dissipation: Thermal conductivity above 170 W/(m·K) at 25 °C, approximately 7-10 times greater than alumina ceramic, enabling efficient heat spreading in power electronics and high-power LED assemblies.
- Thermal expansion matched to silicon: Coefficient of thermal expansion close to silicon reduces thermomechanical stress during thermal cycling, improving reliability in direct-bonded substrate and power module packaging.
Trade-offs
- Surface roughness requires verification: Surface roughness Ra is specified at 0.2–0.3 μm; applications requiring ultra-smooth surfaces for thin-film metallization or direct bonding may need to confirm this tolerance with the supplier.
- Custom finishing and metallization needed separately: The product is supplied as a bare ceramic substrate; polishing, coating, or metallization layers are not included and must be specified during quotation, adding lead time and process steps.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).






