|
Off-Cut Sapphire Substrate – 2 inch (50.8 mm) R/M off-cut 8 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
What are the surface roughness specifications for the front and back sides of this off-cut sapphire substrate?
The front side is Epi-ready with Ra <0.3 nm, suitable for high-quality epitaxial deposition. The back side is fine ground with Ra <1.2 um, providing a textured surface for thermal contact or adhesion. These specifications are part of the Atomfair AF-SOC-RM2A8 model.
What are the dimensional tolerances (TTV, BOW, WARP) for this 2 inch off-cut sapphire substrate?
The substrate has a total thickness variation (TTV) of less than 10 um, bow (BOW) of less than 15 um, and warp (WARP) of less than 15 um. These tight tolerances ensure uniform thickness and minimal warpage, critical for consistent film deposition and lithographic alignment in semiconductor processing.
What thickness options are available for this sapphire substrate, and how does thickness affect handling and thermal management?
The standard thickness is 430 +/- 25 um, but any preferred custom thickness is available. Thickness selection directly impacts thermal dissipation, mechanical rigidity, and compatibility with wafer handling systems; custom options allow optimization for specific deposition or annealing processes.
This 2-inch off-cut sapphire substrate (SKU: AF-WF-S-SOFF-02IN-S047) provides a single-side polished epi-ready front surface (Ra<0.3 nm) with a controlled 8-degree R/M off-cut orientation, enabling high-quality epitaxial growth for III-nitride or oxide thin films. The fine-ground back-side roughness (Ra<1.2 μm) and ±25 μm thickness tolerance impose handling and precision constraints for applications requiring double-sided optical quality or tight dimensional control.
Positive
- Epi-ready front-side surface: Front-side roughness Ra<0.3 nm enables direct epitaxial deposition without additional polishing, reducing substrate preparation time for thin-film growth applications.
- High-purity monocrystalline Al2O3: 99.99% pure monocrystalline Al2O3 (KY) with a defined 8-degree R/M off-cut provides a controlled crystallographic template for lattice-matched heteroepitaxy.
Trade-offs
- Back-side roughness limits clarity: Back-side is fine-ground to Ra<1.2 μm, not polished; this may scatter light and complicate optical measurements or bonding steps requiring a smooth reverse surface.
- Thickness tolerance may affect precision: Thickness is specified as 430 ±25 μm (~5.8% variation), which can be a constraint for applications requiring precise optical path length or resonant cavity dimensions.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
