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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) R/M off-cut 5 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
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E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This off-cut sapphire substrate has a front-side epi-ready surface finish (Ra < 0.3 nm) that requires careful handling to avoid contamination or scratches. The substrate is thin (430 µm) and brittle, demanding gentle handling to maintain its specified flatness and thickness tolerances.
- Front Surface Integrity: The front-side surface must remain free of particles and scratches to sustain its epi-ready roughness specification of Ra < 0.3 nm.
- Mechanical Fragility: The 430 µm thickness and low tolerance for bow and warp require that the substrate be handled without bending, dropping, or applying localized pressure.
- Geometric Tolerances: The specified TTV (< 10 µm), BOW (< 15 µm), and WARP (< 15 µm) must be preserved; any deformation may render the substrate unusable for its intended application.
What is the significance of the single-side polished finish with front-side Ra <0.3 nm and back-side Ra <1.2 um for this sapphire substrate?
The front-side is epi-ready with Ra <0.3 nm for optimal epitaxial layer growth, while the back-side is fine ground to Ra <1.2 um to reduce cost and provide adequate handling surface. This combination balances performance and cost for typical research applications.
What are the key dimensional specifications that affect compatibility with standard 2-inch wafer handling equipment?
The substrate has a diameter of 2 inches (50.8 mm), thickness 430 +/- 25 um, primary flat 16 mm, TTV <10 um, BOW <15 um, and WARP <15 um. These parameters ensure compatibility with vacuum chucks, cassettes, and alignment fixtures common in thin-film deposition systems.
How does the 5-degree R/M off-cut orientation influence substrate mounting and process alignment?
The off-cut is specified as R/M orientation with a 5-degree angle, which is a standard miscut for controlling step-flow growth in epitaxy. The 16 mm primary flat provides a reference for crystallographic alignment during mounting, and the off-cut angle is clearly indicated in the product model for process reproducibility.
This 2-inch off-cut sapphire substrate with R/M orientation and 5-degree off-cut provides high-purity monocrystalline Al2O3 with epi-ready front-side roughness, suitable for epitaxial growth and thin-film deposition requiring precise off-cut angles.
Positive
- High-purity monocrystalline Al2O3: Material purity >99.99% (KY) ensures minimal contamination for sensitive thin-film processes.
- Epi-ready front-side surface: Front-side roughness Ra <0.3 nm meets epi-ready standards, enabling direct use for epitaxial growth without additional polishing.
Trade-offs
- Single-side polished limitation: Only the front side is polished to epi-ready quality; the back side is fine ground (Ra <1.2 um), which may require additional processing for double-side applications.
- Thin substrate handling sensitivity: At 430 um thickness with tight TTV, BOW, and WARP tolerances, the substrate requires careful handling and cleanroom conditions to avoid damage or contamination.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
