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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/A off-cut 2 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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PRODUCT SELECTION SUPPORT
For model selection, material matching or specification support, contact our technical sales team.
E-MAIL: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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How do the front-side and back-side surface roughness specifications of this off-cut sapphire substrate affect its suitability for different applications?
The front side is polished to epi-ready quality with Ra <0.3 nm, making it directly suitable for thin film deposition and device fabrication. The back side is fine ground to Ra <1.2 um, providing a matte finish that reduces light reflection and is typical for handling and mounting. Both specifications are explicitly stated in the product datasheet.
What are the dimensional tolerances (TTV, BOW, WARP) of this 2-inch off-cut sapphire substrate and do they meet standard wafer processing requirements?
The substrate has a thickness of 430 ±25 µm, total thickness variation (TTV) <10 µm, bow (BOW) <15 µm, and warp (WARP) <15 µm. These tight tolerances ensure compatibility with standard wafer handling and processing equipment, minimizing stress and alignment issues during lithography and deposition.
What packaging options are available for this off-cut sapphire substrate and can the thickness be customized?
The substrate is packaged as 1 piece per set, with the package size determined by the selected configuration. In addition to the standard 430 ±25 µm thickness, any preferred custom thickness can be ordered by specifying the requirement during purchase.
This 2-inch off-cut sapphire substrate (C/A 2°, single-side polished) provides an epi-ready front-side roughness (<0.3 nm) and high-purity monocrystalline Al2O3 (99.99%), enabling controlled epitaxial growth of III-nitride films. The back-side fine ground finish (Ra <1.2 μm) and single-side polish restrict its use to applications where only one polished surface is required, and the fixed 2-degree off-cut angle may limit flexibility for alternative growth conditions.
Positive
- Epi-ready front-side roughness: Front-side surface roughness <0.3 nm (Ra) enables atomically flat substrate for high-quality epitaxial layer deposition, critical for thin film devices.
- High-purity monocrystalline Al2O3: >99.99% purity monocrystalline sapphire (KY) minimizes contamination and structural defects, ensuring reliable performance in sensitive thin film processes.
Trade-offs
- Back-side fine ground finish: Back-side roughness Ra <1.2 μm (fine ground) may introduce thermal contact resistance or scattering issues in applications requiring double-side polish or optimal heat dissipation.
- Fixed off-cut angle of 2 degrees: Off-cut angle is fixed at 2 degrees for this variant; if other off-cut angles are required for specific epitaxial growth conditions, this product does not offer flexibility.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
