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Off-Cut Sapphire Substrate – 2 inch (50.8 mm) C/M off-cut 4 degree Single-Side Polished
Product Type: Off-cut sapphire substrate
Research-grade laboratory product
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Why is the off-cut angle and orientation specified for this 2-inch sapphire substrate?
The off-cut orientation (C/M) and angle (4 degrees) are selectable specifications that define the crystallographic plane of the substrate surface. The product is supplied with a single-side polished epi-ready finish (Ra <0.3 nm), indicating it is prepared for high-quality epitaxial deposition. The off-cut angle is a standard parameter provided for research applications requiring precise surface orientation.
What are the flatness specifications (TTV, BOW, WARP) of this off-cut sapphire substrate and how do they affect process compatibility?
The substrate has a TTV (total thickness variation) of less than 10 μm, BOW less than 15 μm, and WARP less than 15 μm. These tight tolerances ensure uniform thickness across the wafer, which is essential for photolithography alignment, wafer bonding, and thin film deposition processes. The source explicitly states these values as part of the diameter-specific specification.
What are the surface roughness specifications for the front and back sides of this single-side polished sapphire substrate?
The front side is epi-ready with a surface roughness (Ra) less than 0.3 nm, requiring cleanroom conditions and careful handling to avoid contamination. The back side is fine ground with a roughness (Ra) less than 1.2 μm, providing a matte surface that reduces sticking and facilitates thermal contact during processing. Both roughness specifications are provided in the product description.
This off-cut sapphire substrate offers high-purity (>99.99%) monocrystalline Al2O3 with a specific 4° C/M off-cut orientation and an epi-ready front-side roughness (Ra <0.3 nm), making it suitable for epitaxial growth requiring precise crystallographic misalignment.
Positive
- High-purity monocrystalline Al2O3: >99.99% purity (KY) ensures minimal contamination for sensitive epitaxial and thin-film processes.
- Epi-ready front-side roughness: Front-side Ra <0.3 nm meets epi-ready standards, enabling direct use for high-quality epitaxial layer deposition without additional polishing.
Trade-offs
- Fixed off-cut orientation and angle: C/M off-cut at 4° is pre-selected; this specific misorientation may not be optimal for all epitaxial growth recipes, requiring validation for target applications.
- Fine ground back-side roughness: Back-side Ra <1.2 µm is relatively rough; double-side polishing or additional processing is needed for applications requiring low back-side roughness (e.g., optical transmission or bonding).
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
